GP2T080A120T - TCPAK (silver look)
Top Side Cooling

1200V
35A
77mOhm

Features:
- High speed switching
- Reliable body diode
- All parts tested to greater than 1,400V
- Avalanche tested to 200mJ*
- Driver source pin for gate driving

Benefits:
- Top side cooling tab
- Lower capacitance
- Higher system efficiency
- Easy to parallel
- Lower Switching Loss
- Longer clearance distance

Applications:
- Solar Inverters
- Switch mode power supplies, UPS
- Induction heating and welding
- EV charging stations
- High voltage DC/DC converters
- Motor drives
- Onboard charger

GP2T040A120TS - TSPAK (copper look)
Top Side Cooling

1200V
52A
38mOhm

Features:
- High speed switching
- Reliable body diode
- All parts tested to greater than 1,400V
- Avalanche tested to 400mJ
- Driver source pin for gate driving
- Ceramic isolated back paddle

Benefits:
- Top side cooling
- Isolated thermal path
- Lower capacitance
- Higher system efficiency
- Easy to parallel
- Lower Switching Loss
- Longer clearance distance

Applications:
- Solar Inverters
- Switch mode power supplies, UPS
- Induction heating and welding
- EV charging stations
- High voltage DC/DC converters
- Motor drives
- Onboard charger

TCPAK / TSPAK / regular SMD package

Why TCPAK/TSPAK compared to regular SMD package?
- Industry standard footprint
- Increased heat dissipation
- Higher power output with improved thermal performance
- Elongated creepage distance
- Reduced board space and cooling requirements

Why TSPAK compared to TCPAK?
- Electrically isolated
- No thermal insulation/pad required
- Increased creepage distance
- Same package dimensions as TCPAK

GP3T040A120H
SiC MOSFET

QSiC™ 1200V SiC MOSFET, 40mOhm, 63A
TO-247-4L package

Features:
High speed switching
Reliable body diode
All parts tested to greater than 1,400V
Avalanche tested to 330mJ
Driver source pin for gate driving 

Benefits:
Lower capacitance
Higher system efficiency
Easy to parallel
Lower Switching Loss
Longer creepage distance

Application:
Solar Inverters
Switch mode power supplies, UPS
Induction heating and welding
EV charging stations
High voltage DC/DC converters
Motor drives 

 

GP3D010A170B
SiC Schottky

discrete SIC Schottky, 1700V, 10A
TO-247-2L package

Features:
Unipolar rectifier with surge current 
Zero reverse recovery current 
Fast, temperature-independent switching 
Avalanche tested to 350mJ* 
All parts tested to greater than 1,870V 
High forward surge current

Benefits:
Near zero switching loss
Higher efficiency 
Smaller heat sink 
Easy to parallel

Applications:
Switch mode power supplies, UPS 
DC/DC Converters 
Solar Inverters 
EV charging stations

GP3D008A065F
SiC Schottky

650V SiC Schottky Diode, 8A
TO-220-2L-FP package

Features:
Unipolar rectifier with surge current 
Zero reverse recovery current 
Fast, temperature-independent switching 
Avalanche tested to 38mJ* 
All parts tested to greater than 715V 
Isolated case

Benefits:
Near zero switching loss
Higher efficiency 
Reduced heat sink requirements 
Easy to paralle

Applications:
Switch mode power supplies, UPS
Power factor correction 
Output rectification 
EV charging stations

GCMX080A120B2H2P
SiC MOSFET

1200V SiC Full-Bridge Module, 27A, 77mΩ

Features:
High speed switching SiC MOSFETs
Reliable body diode 
All parts tested to above 1350V
Kelvin reference for stable operation
Press fit terminal connections

Benefits:
Low switching losses
Low junction to case thermal resistance 
Very rugged and easy mounting
Direct mounting to heatsink (isolated package) 

Applications:
Photovoltaic Inverter 
Battery charger 
Energy storage system 
High voltage DC to DC converter
 

GCMX010A120B3H1P
SiC MOSFET

QSiC™ 1200V SiC Full-Bridge, 10mΩ
B3 package

Features:
High speed switching SiC MOSFETs 
Reliable body diode 
All parts tested to above 1350V
Kelvin reference for stable operation
Press fit terminal connections

Benefits:
Low switching losses 
Low junction to case thermal resistance 
Very rugged and easy mounting 
Direct mounting to heatsink (isolated package)

Applications:
Photovoltaic Inverter 
Battery charger 
Energy storage system 
High voltage DC to DC converter

GCMX003A120S3B1-N
SiC MOSFET

QSiC™ family of high-speed-switching MOSFET
half Bridge, 1200V, 625A
B1 package

Features:
62mm standard footprint 
High speed switching SiC MOSFETs 
Reliable body diode 
All parts tested to above 1350V 
Kelvin reference for stable operation 
AlN Isolated baseplate

Benefit:
Low switching losses 
Low junction to case thermal resistance 
Very rugged and easy mounting 
Direct mounting to heatsink (isolated package) 
Low thermal impedance

Application:
Photovoltaic and Wind Inverter 
EV/Battery charger 
Energy storage system 
High voltage DC to DC converter 
Induction Heating 
SMPS and UPS

GCMX003A120S7B1
SiC MOSFET

QSiC™ 1200V SiC Half-Bridge, 529A
S7 package

Features:
62mm footprint with reduced package height (17 mm)
High speed switching SiC MOSFETs 
Reliable body diode 
All parts tested to above 1350V 
Kelvin reference for stable operation 
Isolated baseplate

Benefit:
Lower inductance from reduced package height 
Low switching losses 
Low junction to case thermal resistance 
Very rugged and easy mounting 
Direct mounting to heatsink (isolated package)

Application:
Photovoltaic and Wind Inverter 
EV/Battery charger 
Energy storage system 
High voltage DC to DC converter 
Induction Heating 
SMPS and UPS

Known-Good-Die (KGD)

• Consistent Electrical Parameters and Repeatable Performance: Each die undergoes rigorous testing to ensure consistent electrical characteristics, leading to predictable device performance and higher manufacturing yields.
• Simplified Module Assembly and Higher Power Density: The uniform electrical characteristics of KGDs enable easier integration into power modules, resulting in smaller, more efficient designs.
• Improved Performance in High-Frequency Applications: Features like near-constant junction capacitance and low insertion loss make KGDs ideal for high-frequency applications, minimizing switching losses and improving overall efficiency.
• Applications in Future-Oriented Technologies: KGDs play a crucial role in enabling advancements in electric vehicles, renewable energy, and industrial power systems.
• Quality Assurance: SemiQ implements stringent quality control measures to guarantee the highest quality standards for its KGDs.
• Customer-Specific Solutions: SemiQ offers customized solutions to meet the specific needs of its customers.
• Future Outlook: As SiC technology continues to evolve, KGDs are poised to deliver even greater performance and reliability.

!NEW! - EU7512L
32bit - 3-phase brushless DC motor controller MCU

FU7512 is a ME & RISC-V Dual-core MCU 

FU7512L is a high-performance motor controller that integrates motor control engine (ME) and RISC-V core. ME integrates FOC, 4-level second-order configurable filter and CORDIC hardware module, which can automatically complete the calculation and control of FOC/square wave drive of sensored/  sensorless BLDC motor/ PMSM by hardware; RISC-V core is used for parameter configuration and general tasks  processing, and the dual-cores work parallel for various high-performance motor control. The chip integrates high-speed operational amplifier, comparator, high-speed ADC, CRC, SPI, I2C, UART, LIN, CAN2.0, CANFD, BISS, DataMonitor, multiple timers and other functions, which is suitable for square wave and FOC control of BLDC/PMSM motors.

Features
RSIC-V 32bit core
ME core（motor control core）
24M/48M high precision oscillator
64K Flash、12K SRAM
6 channel half-bridge PWM output (only for motor driving)
8 x 16bit  timer
3 x 12bit hifh precision 1MSPS ADC
AMP： 7 x
CMP： 8 x
DAC： 5 x
Integrate LIN PHY module, support LIN2.X
Integrate  CAN/CANFD protocol
2 x SPI modules
PFC module（support single/dual bridge mode）
Biss protocol

Applikation
- Dryer (Main Motor + Fan)
- refridgerator (Compressor + Fan)
- air conditioner (compressor + outdoor fan)
- electric lawn mower (lawn mower +  tracking motor)
- washing machine (main motor + water pump)
 

ED2203S
Half-bridge Gate Driver designed for driving high-voltage, high-speed N-type power MOSFET

ED2203S is a Half-bridge Gate Driver designed for driving high-voltage, high-speed N-type power MOSFET, and workable at 250V circuit. ED2203S has built-in under-voltage (UVLO) protection to prevent the power tube at low voltage to work, and also for improving efficiency. ED2203S has also built-in input signal filtering to prevent input noise. It can also prevent the short-circuit turning on of MOSFETs, and thus protect effectively the power devices

Features
- Suspension absolute voltage :+250V
- Output current: +1.6A/-2.3A
- Input logic compatible: 3.3V/5V
- VCC/VBS Undervoltage protection (UVLO)
- High side output is in phase with the high side input
- Low side output is out of phase with the low side input
- Cross-conduction prevention
- Built-in 250ns dead time zone
- Channel matching for high and low side

Applikation
- Wireless charger
- E-bike
- electric drill
- grass trimmer
 

EU6812S2
MCU Embedded and Configurable 3-Phase BLDC/PMSM Motor Controller

EU6812x2/61x2/62x2 series is a high performance motor driver dedicated chip integrated with 8051 kernel and motor control engine (ME). 8051 kernel deals with routine affairs, ME deals with motor real-time transactions, and dual-core collaborative work realizes various high performance motor control. Most of the 8051 kernel instruction cycle is 1T or 2T, chip internal integration of high-speed operational amplifier, comparator, high-speed ADC, multiplier, divider, CRC, SPI, I2C, UART, a variety of TIMER, PWM and other functions, built-in high voltage LDO, BLDC/PMSM motor square wave, SVPWM/SPWM, FOC driver control. For the differences between EU6812 and EU6861, please refer to the Driver chapter. The output method of EU6812 is PWM, while the output of EU6861 is 6N Predriver.
EU6812 package types: EU6812L2 (LQFP48), EU6812N2 (QFN32), EU6812S2 (SSOP24), EU6812P2
(LQFP32), EU6812V(SSOP24). EU6861 package types: EU6861Q2 (QFN56), EU6861N2 (QFN40), EU6861L2(LQFP48). EU6862 package types: EU6862L(LQFP48)、EU6862Q(QFN48). For the convenience of description and differentiation, if specific packages are specified later, it means that
this feature is exclusive to corresponding packages; otherwise, it is a common feature of EU6812x2/61x2/62x2 series chips.

Features
- 12 GPIO
- 5 ADC channels
- Built-in VREF reference for configureable 3V, 4V, 4.5V, VDD5 (EU6812S2/P2/V can only choose VDD5 for internal reference.
- Built-in VHALF (1/2 VREF) reference output.
- 3 independent operational amplifiers (EU6812N2/S2 and EU6861N2 only have an independent op amp)
- 3-channel analog comparator
- 9-bit DAC
- PWM output (for EU6812L2/N2/S2/P/V)
- BLDC control supports automatic commutation, wave-by-wave current limiting, support for HALL BEMF position detection.
- FOC driver supports single/dual/three resistors current sampling (EU6812N2/S2 and EU6861N2 only
- support single resistor current sampling).
- FOC driver supports overmodulation
- Built-in oscillator

Applikation
- Sensorless/Sensor BLDC/PMSM
- three -phase/single-phase induction motor
- servo motor
- Range hoods
- indoor units
- ceiling fans
- floor fans
- vacuum cleaners
- hair dryers
- industrial fans
- water pumps 
- compressors
- electric vehicles
- electric tools
- aircraft models
- etc.
 

ET8132S
Three phase ASICs

ET8132 is an IC with built-in three-phase predriver designed for BLDC motor drive system. Due to a high level of integration, the chip has few peripheral components and is featured with low noise and small torque ripple. Motor parameters, startup control parameters and speed regulation mode can be
configured via GUI, and are stored in built-in EEPROM. Analog voltage, PWM, I2C interface or CLOCK mode is available for motor speed regulation. Moreover, the chip integrates speed indicator to read motor speed in real time via FG pin or I2C interface. Speed-loop, current-loop, power-loop or voltage-loop control mode is optional. In addition, the chip is secured with various protection features, including over-current protection (OCP), under-voltage lockout (UVLO), over-voltage lockout (OVLO), motor lock protection (MLP), phase loss protection, abnormal Hall input detection (HALLERR) protection, etc. Sleep current of the chip is about 60μA.

Features 
- Sensorless FOC
- Hall-based FOC (Hall-IC/Hall-Sensor)
- Hall-based SVPWM (Hall-IC/Hall-Sensor)
- 3P3N pre-driver with configurable deadtime
- Speed-loop, current-loop, power-loop or voltage-loop control mode
- Analog voltage, PWM, I2C interface or CLOCK mode for motor speed regulation
- Real-time information interactions by I2C for motor control and motor states readback
- Rotor initial position detection
- Tailwind and headwind detection
- Soft-on and soft-off features
- Built-in EEPROM
- Configurable multi-segment output curve
- Configurable multi-segment output curve
- Support protection features, including OCP, UVLO, OVLO, MLP, phase loss protection, abnormal Hall input detection (HALLERR) protection, etc.
- Forward or reverse rotation selectable
- FG and RD output

Application
- Pedestal fans
- cooling fans
-ceiling fans
- robot vacuum cleaners
- vacuum cleaners
- etc.
 

Application: Vacuum cleaner

Solution:
ASIC - ET8132 + P/N MOSFET

ASIC - ET8161T/N + N MOSFET

MCU - EU6832 + P/N MOSFET

MCU - EU6861Q2 + N MOSFET

MCU - EU6572 + N MOSFET

Features: ultrahigh speed, low noise, high integration, high cost efficiency

Application: Hair Dryer

Solution:
MCU - EU6812L2 + ES256

MCU - EU6812l2 + ED2606 + N MOSFET

MCU - EU6862 + N MOSFET

MCU - EU6862L + N MOSFET

Features: low noise, quick response, cost efficiency, high efficiency

Application: seat fan (automotive)

Solution:
ET8215Q1 - All in One ASIC with pre-driver and MOSFET

Advantages: 
- fully integrated ASIC chip with built-in MOSFET
- high integration
- less peripheral circuits
- FOC algorithm control
- low noise
- high efficiency
- GUI debugging
- complete functions

Application: water pump (automotive)

Solution:
EU6881Q1 - All in One MCU Solution

Advantages: 
- integrated two/three-phase stepper
- brushless/brush motor control algorithm