Unsere Produkte im Überblick

Immer die richtige Lösung für Ihre Applikation

Aktive Komponenten

Si Thyristoren

Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Sperrspannung [V]	Nennstrom [A]	Nennstrom [mA]	Produkt Feature	Produkt Status
Y24KPA	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	400	600	0,6	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y30KPA	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	400	1000	1	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y38KPA	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	400	1500	1,5	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y24KPC	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	600 to 1000	500	0,5	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y30KPC	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	600 to 1000	1000	1	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y38KPC	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	600 to 1000	1500	1,5	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y50KPC	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	600 to 1000	2500	2,5		In Production	Anfragen
Y65KPC	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	600 to 1000	3000	3	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y76KPC	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	600 to 1000	4000	4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y24KPE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	400	0,4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y30KPE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	600	0,6	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y38KPE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	1000	1	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y50KPE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	1800	1,8	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y65KPE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	2800	2,8	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y76KPE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	4000	4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
H38KPR	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	6000 to 6500	400	0,4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
H50KPR	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	6000 to 6500	900	0,9	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
H65KPR	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	6000 to 6500	1600	1,6		In Production	Anfragen
H89KPR	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	6000 to 6500	2200	2,2	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
H100KPR	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	6000 to 6500	3500	3,5	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
H125KPR	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	6000 to 6500	5200	5,2	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y50KPJ	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	3000 to 4200	1200	1,2	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y65KPJ	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	3000 to 4200	1900	1,9	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y76KPJ	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	3000 to 4200	2400	2,4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Anfragen
Y30KKE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	400	0,4	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
Y38KKE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	800	0,8	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
Y50KKE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	1300	1,3	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
Y65KKE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	2000	2	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
Y76KKE	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	1200 to 1800	2700	2,7	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
Y70KKG	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	2000 to 2800	2100	2,1	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
Y76KKG	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	2000 to 2800	2700	2,7	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
Y89KKG	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	2000 to 2800	3800	3,8	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
Y100KKG	Techsem	Scheibenzelle	Si Thyristoren	Aktive Komponenten	2000 to 2800	4800	4,8	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Anfragen
MTC26	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	26	0,026	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC40	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	40	0,04	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC55	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	55	0,055	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC70	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	70	0,07	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC90	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	90	0,09	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC110	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	110	0,11	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC135	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	135	0,135	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC160	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	160	0,16	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC182	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	182	0,182	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC200	Techsem	Module	Si Thyristoren	Aktive Komponenten	2000 to 2500	200	0,2	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC250	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 2500	250	0,25	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC285	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	285	0,285	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC500	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	500	0,5	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MTC570	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	570	0,57	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
Mt500	Techsem	Module	Si Thyristoren	Aktive Komponenten	1200 to 1800	400	0,4	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
Mt400	Techsem	Module	Si Thyristoren	Aktive Komponenten	2000 to 2500	400	0,4	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen

Scroll

Si Dioden

Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Sperrspannung [V]	Nennstrom [A]	Nennstrom [mA]	Produkt Feature	Produkt Status
Y24ZPA	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	400	1000	1	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y30ZPA	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	400	1460	1,46	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y38ZPA	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	400	1990	1,99	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y50ZPA	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	400	6300	6,3	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y65ZPA	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	400	8500	8,5	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y24ZPC	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	1200 to 2000	600	0,6	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y30ZPC	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	1200 to 2000	1310	1,31	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y38ZPC	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	1200 to 2000	1680	1,68	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y50ZPC	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	1200 to 2000	3000	3	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
Y76ZPC	Techsem	Scheibenzelle	Si Dioden	Aktive Komponenten	1200 to 2000	6000	6	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Anfragen
MDC26	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	26	0,026	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC40	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	40	0,04	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC55	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	55	0,055	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC70	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	70	0,07	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC90	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	90	0,09	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC110	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	110	0,11	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC135	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	135	0,135	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC160	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	160	0,16	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC182	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	182	0,182	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC200	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	200	0,2	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC250	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 2500	250	0,25	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC300	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 2500	300	0,3	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC500	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 2500	500	0,5	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDC570	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 1800	570	0,57	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MD500	Techsem	Module	Si Dioden	Aktive Komponenten	1200 to 2500	400	0,4	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen

Scroll

Thyristor-Dioden-Module

Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Sperrspannung [V]	Nennstrom [A]	Nennstrom [mA]	Produkt Feature	Produkt Status
MFC26	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	26	0,026	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC40	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	40	0,04	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC55	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	55	0,055	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC70	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	70	0,07	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC90	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	90	0,09	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC110	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	110	0,11	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC135	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	135	0,135	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC160	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	160	0,16	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC182	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	182	0,182	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC200	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	2000 to 2500	200	0,2	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC250	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 2500	250	0,25	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC285	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	285	0,285	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC500	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	500	0,5	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MFC570	Techsem	Module	Thyristor-Dioden-Module	Aktive Komponenten	1200 to 1800	570	0,57	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen

Scroll

Gleichrichter

Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Sperrspannung [V]	Nennstrom [A]	Nennstrom [mA]	Produkt Feature	Produkt Status
MDS50	Techsem	Module	Gleichrichter	Aktive Komponenten	800 to 1600	50	0,05	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDS75	Techsem	Module	Gleichrichter	Aktive Komponenten	800 to 1600	75	0,075	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDS100	Techsem	Module	Gleichrichter	Aktive Komponenten	800 to 1600	100	0,1	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDS150	Techsem	Module	Gleichrichter	Aktive Komponenten	800 to 1600	150	0,15	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen
MDS200	Techsem	Module	Gleichrichter	Aktive Komponenten	800 to 1600	200	0,2	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Anfragen