Bild |
Serie/Typ |
Hersteller |
Produktgruppe |
Artikelkategorie |
Hauptkategorie
|
Gehäusetyp |
Topologie |
Sperrspannung [V] |
Nennstrom [A] |
Nennstrom [mA] |
Nennstrom [25°] |
Abmessungen L [mm] |
Abmessungen W/D [mm] |
Produkt Feature |
Produkt Status |
|
|
GP3D006A065X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
650
|
6
|
63000
|
6
|
1,37
|
1,37
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D008A065X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
650
|
8
|
63000
|
8
|
1,54
|
1,54
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D010A065X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
650
|
10
|
63000
|
10
|
1,78
|
1,78
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D012A065X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
650
|
12
|
63000
|
12
|
1,5
|
2,9
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D020A065X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
650
|
20
|
63000
|
20
|
2,39
|
2,39
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D030A065X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
650
|
30
|
63000
|
30
|
2,86
|
2,86
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D050A065X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
650
|
50
|
63000
|
50
|
3,5
|
3,5
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D010A120X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
1200
|
10
|
63000
|
10
|
2,4
|
2,4
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D015A120X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
1200
|
15
|
63000
|
15
|
2,12
|
4,1
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D020A120X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
1200
|
20
|
63000
|
20
|
3,25
|
3,25
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D030A120X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
1200
|
30
|
63000
|
30
|
3,9
|
3,9
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D050A120X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
1200
|
50
|
63000
|
50
|
4,93
|
4,93
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D005A170X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
1700
|
5
|
63000
|
5
|
2,4
|
2,4
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D010A170X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
1700
|
10
|
63000
|
10
|
2,91
|
2,91
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D020A170X-SBT
|
SemiQ
|
Bare Die
|
SiC Dioden
|
Aktive Komponenten
|
sawn on blue tape
|
|
1700
|
20
|
63000
|
20
|
3,95
|
3,95
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Reduced temperature dependence of Vf
|
in production
|
Anfragen
|
|
GP3D006A065A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
650
|
6
|
63000
|
6
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 29mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D006A065D
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-263
|
|
650
|
6
|
63000
|
6
|
|
|
|
in production
|
Anfragen
|
|
GP3D008A065A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
650
|
8
|
63000
|
8
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 38mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D008A065D
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-263
|
|
650
|
8
|
63000
|
8
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 38mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D010A065A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
650
|
10
|
63000
|
10
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 67mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D010A065B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
650
|
10
|
63000
|
10
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 67mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D010A065D
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-263
|
|
650
|
10
|
63000
|
10
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 67mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D012A065A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
650
|
12
|
63000
|
12
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 80mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D012A065B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
650
|
12
|
63000
|
12
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 80mJ
|
in production
|
Anfragen
|
|
GP3D020A065A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
650
|
20
|
63000
|
20
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 135mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D020A065B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
650
|
20
|
63000
|
20
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 135mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D030A065B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
650
|
30
|
63000
|
30
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 200mJ
|
in production
|
Anfragen
|
|
GP3D050A065B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
650
|
50
|
63000
|
50
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 333mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D020A065U
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-3L
|
|
650
|
20
|
63000
|
20
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 67mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D024A065U
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-3L
|
|
650
|
24
|
63000
|
24
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 80mJ per leg
|
in production
|
Anfragen
|
|
GP3D040A065U
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-3L
|
|
650
|
40
|
63000
|
40
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 135mJ
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D010A120A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
1200
|
10
|
63000
|
10
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 125mJ
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D010A120B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1200
|
10
|
63000
|
10
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 125mJ
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D015A120A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
1200
|
15
|
63000
|
15
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 200mJ
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D015A120B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1200
|
15
|
63000
|
15
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 200mJ
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D020A120A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
1200
|
20
|
63000
|
20
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 275mJ
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D020A120B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1200
|
20
|
63000
|
20
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 275mJ
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D030A120B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1200
|
30
|
63000
|
30
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 400mJ
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D040A120B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1200
|
40
|
63000
|
40
|
|
|
|
in production
|
Anfragen
|
|
GP3D050A120B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1200
|
50
|
63000
|
50
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 666mJ
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D020A120U
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-3L
|
|
1200
|
20
|
63000
|
20
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 125mJ per leg
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D030A120U
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-3L
|
|
1200
|
30
|
63000
|
30
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 200mJ per leg
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D040A120U
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-3L
|
|
1200
|
40
|
63000
|
40
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 275mJ per leg
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D060A120U
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-3L
|
|
1200
|
60
|
63000
|
60
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 400mJ per leg
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GP3D005A170B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1700
|
5
|
63000
|
5
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 145mJ
|
in production
|
Anfragen
|
|
GP3D010A170B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1700
|
10
|
63000
|
10
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 350mJ
• All parts tested to greater than 1870V
• High forward surge current
|
in production
|
Anfragen
|
|
GP3D020A170A
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220-2L
|
|
1700
|
20
|
63000
|
20
|
|
|
|
in production
|
Anfragen
|
|
GP3D020A170B
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-2L
|
|
1700
|
20
|
63000
|
20
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 600mJ
• All parts tested to greater than 1870V
|
in production
|
Anfragen
|
|
GP3D016A065U
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-247-3L
|
|
650
|
16
|
63000
|
16
|
|
|
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 38mJ per leg
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GP3D006A065F
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220FP-2L
|
|
650
|
6
|
63000
|
6
|
|
|
|
in production
|
Anfragen
|
|
GP3D008A065F
|
SemiQ
|
SiC Diskret
|
SiC Dioden
|
Aktive Komponenten
|
TO-220FP-2L
|
|
650
|
8
|
63000
|
8
|
|
|
|
in production
|
Anfragen
|
|
GHXS010A060S-D3
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Duel Diode Pack
|
600
|
10
|
63000
|
10
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GHXS020A060S-D3
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Duel Diode Pack
|
600
|
20
|
63000
|
20
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GHXS030A060S-D3
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Duel Diode Pack
|
600
|
30
|
63000
|
30
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 700V
|
in production
|
Anfragen
|
|
GHXS030A060S-D1E
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Rectifier Bridge
|
600
|
30
|
63000
|
30
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GHXS050A060S-D3
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Duel Diode Pack
|
600
|
50
|
63000
|
50
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GHXS050B065S-D3
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Duel Diode Pack
|
650
|
50
|
63000
|
50
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GHXS100B065S-D3
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Duel Diode Pack
|
650
|
100
|
63000
|
100
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 715V
|
in production
|
Anfragen
|
|
GHXS015A120S-D1
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Rectifier Bridge
|
1200
|
15
|
63000
|
15
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GHXS015A120S-D3
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Duel Diode Pack
|
1200
|
15
|
63000
|
15
|
|
|
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 1400V
|
in production
|
Anfragen
|
|
GHXS030A120S-D3
|
SemiQ
|
SiC Module
|
SiC Dioden
|
Aktive Komponenten
|
SOT-227
|
Duel Diode Pack
|
1200
|
30
|
63000
|
30
|