Unsere Produkte im Überblick

Immer die richtige Lösung für Ihre Applikation

Aktive Komponenten

SiC Mosfets

Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Gehäusetyp	Topologie	Sperrspannung [V]	RDS on [mOhm]	Nennstrom [A]	Nennstrom [mA]	Nennstrom [25°]	Nennstrom [100°]	Betriebstemperatur[°C]	Produkt Feature	Produkt Status
GCMX034C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	34	51	51000	51	37	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ	in production	Anfragen
GCMS034C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	34	53	53000	53	38	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ	in production	Anfragen
GCMX016B120B3H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Full Bridge Module	1200	16,6	95	95000	95	82	-55 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Anfragen
GCMX008B120B3H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Full Bridge Module	1200	8,6	120	120000	120	120	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Anfragen
GCMX014C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	14,5	104	104000	104	75	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Anfragen
GCMX007C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	7,4	192	192000	192	137	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Anfragen
GCMS014C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	15	103	103000	103	74	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Anfragen
GCMS007C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	7,3	189	189000	189	135	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Anfragen
GP3T080A120TS	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TSPAK	Discrete	1200	80	27	27000	27	19	-55 to 175	• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving • Ceramic isolated back paddle	in production	Anfragen
GP3T040A120TS	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TSPAK	Discrete	1200	38	50	50000	50	36	-55 to 175	• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 300mJ • Driver source pin for gate driving • Ceramic isolated back paddle	in production	Anfragen
GP3T020A120TS	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TSPAK	Discrete	1200	18	89	89000	89	64	-55 to 175	• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 700mJ • Driver source pin for gate driving • Ceramic isolated back paddle	in production	Anfragen
GP3T016A120TS	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TSPAK	Discrete	1200	16	101	101000	101	72	-55 to 175	• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving • Ceramic isolated back paddle	in production	Anfragen
GP3T034A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	32	62	62000	62	44	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving	in production	Anfragen
GP3T017A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	15	120	120000	120	86	-55 to 175	• Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer creepage distance	in production	Anfragen
GP3T014A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	14	133	133000	133	96	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving	in production	Anfragen
GCMX016C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	16,5	103	103000	103	74	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Anfragen
GCMX080C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	84	28	28000	28	21	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ	in production	Anfragen
GCMS080C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	84	28	28000	28	21	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ	in production	Anfragen
GCMX040C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	39	53	53000	53	38	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ	in production	Anfragen
GCMS040C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	39	53	53000	53	38	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ	in production	Anfragen
AS3T016A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	16	132	132000	132	95	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101	in production	Anfragen
AS3T040A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	38	62	62000	62	44	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 330mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q103	in production	Anfragen
GP2T020A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	20	119	119000	119	86	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving	in production	Anfragen
GP2T040A120U	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-3L	Discrete	1200	37	63	63000	63	47	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*	in production	Anfragen
GP2T040A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	37	63	63000	63	47	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving	in production	Anfragen
GP2T040A120J	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-263-7L	Discrete	1200	38	66	66000	66	49	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving	in production	Anfragen
GP2T080A120U	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-3L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*	in production	Anfragen
GP2T080A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design	in production	Anfragen
GP2T080A120J	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-263-7L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving	in production	Anfragen
GCMX003A120S3B1-N	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	S3	Half Bridge Module	1200	3	625	625000	625		-40 to 175	• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • AlN Isolated baseplate	in production	Anfragen
GCMX003A120S7B1	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	S7 Half Bridge	Half Bridge Module	1200	3	529	529000	529		-40 to 175	• 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Isolated baseplate	in production	Anfragen
GCMX005A120B3B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Half Bridge Module	1200	4,4	383	383000	383	331	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX005A120S3B1-N	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	S3	Half Bridge Module	1200	4,8	424	424000	424		-40 to 175	• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • AlN Isolated baseplate	in production	Anfragen
GCMX005A120S7B1	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	S7 Half Bridge	Half Bridge Module	1200	4,9	348	348000	348		-40 to 175	• 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Isolated baseplate	in production	Anfragen
GCMX008C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	8,4	188	188000	188	134	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Anfragen
GCMS008C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	8,4	189	189000	189	135	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Anfragen
GCMX010A120B3H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Full Bridge Module	1200	8,9	201	201000	201		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Anfragen
GCMS010B120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	9	218	218000	218	157	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMX010B120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	10	202	202000	202	146	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMX010A120B3B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Half Bridge Module	1200	9	173	173000	173	151	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX010A120B2B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Half Bridge Module	1200	9	214	214000	214	186	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMS016C120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	16,5	103	103000	103	74	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Anfragen
GCMX020A120B2H2P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Full Bridge Module	1200	18	102	102000	102		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals	in production	Anfragen
GCMX020A120B2H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Full Bridge Module	1200	18	102	102000	102	88	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX020A120B3H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Full Bridge Module	1200	18,1	93	93000	93	81	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX020A120B2B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Half Bridge Module	1200	19	102	102000	102	89	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMS020B120S1-E1	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	SOT-227	Module	1200	20	113	113000	113	81	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMX020B120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	20	113	113000	113	81	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMX040B120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	40	57	57000	57	42	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMS040B120S1-E1	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	SOT-227	Module	1200	37	57	57000	57	42	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMX040A120B2B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Half Bridge Module	1200	38	56	56000	56		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Anfragen
GCMX040A120B2H2P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Full Bridge Module	1200	38	56	56000	56		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals	in production	Anfragen
GCMX040A120B3H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Full Bridge Module	1200	38	53	53000	53	46	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX040A120B2H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Full Bridge Module	1200	38	56	56000	56	49	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX080A120B2H2P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Full Bridge Module	1200	77	27	27000	27		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals	in production	Anfragen
GCMX080A120B2H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Full Bridge Module	1200	77	27	27000	27		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Anfragen
GCMS080B120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	77	30	30000	30	22	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMX080B120S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1200	80	30	30000	30	22	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
AS2T030A170H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1700	28	83	83000	83	61	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,900 V • Avalanche tested to 600mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101	in production	Anfragen
GP2T030A170H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1700	31	83	83000	83	61	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,900 V • Avalanche tested to 600mJ* • Driver source pin for gate driving	in production	Anfragen
GCMX030A170S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1700	31	66	66000	66	48	-55 to 175	• High speed switching • Simple to drive • Avalanche tested to 600mJ* • Kelvin reference for stable operation	in production	Anfragen
GCMX015A170S1-E1	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	Discrete	1700	16	123	123000	123	89	-55 to 175	• High speed switching • Simple to drive • Avalanche tested to 600mJ* • Kelvin reference for stable operation	in production	Anfragen
GCMX005A170S3B1-N	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	S3	Half Bridge Module	1700	5,3	397	397000	397		-40 to 175	• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1900V • Kelvin reference for stable operation • AlN Isolated baseplate	in production	Anfragen