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Si Thyristors

Image Series/Type Manufacturer Product Group Category Main Category Blocking Voltage[V] Rated Current [A] Rated Current [mA] Product Feature Product Status
Techsem Y24KPA Y24KPA Techsem capsule Si Thyristors Active Components 400 600 0.6
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y30KPA Y30KPA Techsem capsule Si Thyristors Active Components 400 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y38KPA Y38KPA Techsem capsule Si Thyristors Active Components 400 1500 1.5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y24KPC Y24KPC Techsem capsule Si Thyristors Active Components 600 to 1000 500 0.5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y30KPC Y30KPC Techsem capsule Si Thyristors Active Components 600 to 1000 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y38KPC Y38KPC Techsem capsule Si Thyristors Active Components 600 to 1000 1500 1.5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y50KPC Y50KPC Techsem capsule Si Thyristors Active Components 600 to 1000 2500 2.5
In Production
Request
Techsem Y65KPC Y65KPC Techsem capsule Si Thyristors Active Components 600 to 1000 3000 3
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y76KPC Y76KPC Techsem capsule Si Thyristors Active Components 600 to 1000 4000 4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y24KPE Y24KPE Techsem capsule Si Thyristors Active Components 1200 to 1800 400 0.4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y30KPE Y30KPE Techsem capsule Si Thyristors Active Components 1200 to 1800 600 0.6
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y38KPE Y38KPE Techsem capsule Si Thyristors Active Components 1200 to 1800 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y50KPE Y50KPE Techsem capsule Si Thyristors Active Components 1200 to 1800 1800 1.8
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y65KPE Y65KPE Techsem capsule Si Thyristors Active Components 1200 to 1800 2800 2.8
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y76KPE Y76KPE Techsem capsule Si Thyristors Active Components 1200 to 1800 4000 4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem H38KPR H38KPR Techsem capsule Si Thyristors Active Components 6000 to 6500 400 0.4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem H50KPR H50KPR Techsem capsule Si Thyristors Active Components 6000 to 6500 900 0.9
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
No Image H65KPR Techsem capsule Si Thyristors Active Components 6000 to 6500 1600 1.6
In Production
Request
Techsem H89KPR H89KPR Techsem capsule Si Thyristors Active Components 6000 to 6500 2200 2.2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem H100KPR H100KPR Techsem capsule Si Thyristors Active Components 6000 to 6500 3500 3.5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem H125KPR H125KPR Techsem capsule Si Thyristors Active Components 6000 to 6500 5200 5.2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y50KPJ Y50KPJ Techsem capsule Si Thyristors Active Components 3000 to 4200 1200 1.2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y65KPJ Y65KPJ Techsem capsule Si Thyristors Active Components 3000 to 4200 1900 1.9
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y76KPJ Y76KPJ Techsem capsule Si Thyristors Active Components 3000 to 4200 2400 2.4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
Request
Techsem Y30KKE Y30KKE Techsem capsule Si Thyristors Active Components 1200 to 1800 400 0.4
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem Y38KKE Y38KKE Techsem capsule Si Thyristors Active Components 1200 to 1800 800 0.8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem Y50KKE Y50KKE Techsem capsule Si Thyristors Active Components 1200 to 1800 1300 1.3
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem Y65KKE Y65KKE Techsem capsule Si Thyristors Active Components 1200 to 1800 2000 2
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem Y76KKE Y76KKE Techsem capsule Si Thyristors Active Components 1200 to 1800 2700 2.7
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem Y70KKG Y70KKG Techsem capsule Si Thyristors Active Components 2000 to 2800 2100 2.1
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem Y76KKG Y76KKG Techsem capsule Si Thyristors Active Components 2000 to 2800 2700 2.7
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem Y89KKG Y89KKG Techsem capsule Si Thyristors Active Components 2000 to 2800 3800 3.8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem Y100KKG Y100KKG Techsem capsule Si Thyristors Active Components 2000 to 2800 4800 4.8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
Request
Techsem MTC26 MTC26 Techsem module Si Thyristors Active Components 1200 to 1800 26 0.026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC40 MTC40 Techsem module Si Thyristors Active Components 1200 to 1800 40 0.04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC55 MTC55 Techsem module Si Thyristors Active Components 1200 to 1800 55 0.055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC70 MTC70 Techsem module Si Thyristors Active Components 1200 to 1800 70 0.07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC90 MTC90 Techsem module Si Thyristors Active Components 1200 to 1800 90 0.09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC110 MTC110 Techsem module Si Thyristors Active Components 1200 to 1800 110 0.11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC135 MTC135 Techsem module Si Thyristors Active Components 1200 to 1800 135 0.135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC160 MTC160 Techsem module Si Thyristors Active Components 1200 to 1800 160 0.16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC182 MTC182 Techsem module Si Thyristors Active Components 1200 to 1800 182 0.182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC200 MTC200 Techsem module Si Thyristors Active Components 2000 to 2500 200 0.2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC250 MTC250 Techsem module Si Thyristors Active Components 1200 to 2500 250 0.25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC285 MTC285 Techsem module Si Thyristors Active Components 1200 to 1800 285 0.285
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC500 MTC500 Techsem module Si Thyristors Active Components 1200 to 1800 500 0.5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MTC570 MTC570 Techsem module Si Thyristors Active Components 1200 to 1800 570 0.57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem Mt500 Mt500 Techsem module Si Thyristors Active Components 1200 to 1800 400 0.4
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem Mt400 Mt400 Techsem module Si Thyristors Active Components 2000 to 2500 400 0.4
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
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Si Diodes

Image Series/Type Manufacturer Product Group Category Main Category Blocking Voltage[V] Rated Current [A] Rated Current [mA] Product Feature Product Status
Techsem Y24ZPA Y24ZPA Techsem capsule Si Diodes Active Components 400 1000 1
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y30ZPA Y30ZPA Techsem capsule Si Diodes Active Components 400 1460 1.46
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y38ZPA Y38ZPA Techsem capsule Si Diodes Active Components 400 1990 1.99
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y50ZPA Y50ZPA Techsem capsule Si Diodes Active Components 400 6300 6.3
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y65ZPA Y65ZPA Techsem capsule Si Diodes Active Components 400 8500 8.5
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y24ZPC Y24ZPC Techsem capsule Si Diodes Active Components 1200 to 2000 600 0.6
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y30ZPC Y30ZPC Techsem capsule Si Diodes Active Components 1200 to 2000 1310 1.31
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y38ZPC Y38ZPC Techsem capsule Si Diodes Active Components 1200 to 2000 1680 1.68
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y50ZPC Y50ZPC Techsem capsule Si Diodes Active Components 1200 to 2000 3000 3
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem Y76ZPC Y76ZPC Techsem capsule Si Diodes Active Components 1200 to 2000 6000 6
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
Request
Techsem MDC26 MDC26 Techsem module Si Diodes Active Components 1200 to 1800 26 0.026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC40 MDC40 Techsem module Si Diodes Active Components 1200 to 1800 40 0.04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC55 MDC55 Techsem module Si Diodes Active Components 1200 to 1800 55 0.055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC70 MDC70 Techsem module Si Diodes Active Components 1200 to 1800 70 0.07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC90 MDC90 Techsem module Si Diodes Active Components 1200 to 1800 90 0.09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC110 MDC110 Techsem module Si Diodes Active Components 1200 to 1800 110 0.11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC135 MDC135 Techsem module Si Diodes Active Components 1200 to 1800 135 0.135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC160 MDC160 Techsem module Si Diodes Active Components 1200 to 1800 160 0.16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC182 MDC182 Techsem module Si Diodes Active Components 1200 to 1800 182 0.182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC200 MDC200 Techsem module Si Diodes Active Components 1200 to 1800 200 0.2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC250 MDC250 Techsem module Si Diodes Active Components 1200 to 2500 250 0.25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC300 MDC300 Techsem module Si Diodes Active Components 1200 to 2500 300 0.3
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC500 MDC500 Techsem module Si Diodes Active Components 1200 to 2500 500 0.5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDC570 MDC570 Techsem module Si Diodes Active Components 1200 to 1800 570 0.57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MD500 MD500 Techsem module Si Diodes Active Components 1200 to 2500 400 0.4
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
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Thyristor Diode Modules

Image Series/Type Manufacturer Product Group Category Main Category Blocking Voltage[V] Rated Current [A] Rated Current [mA] Product Feature Product Status
Techsem MFC26 MFC26 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 26 0.026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC40 MFC40 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 40 0.04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC55 MFC55 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 55 0.055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC70 MFC70 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 70 0.07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC90 MFC90 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 90 0.09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC110 MFC110 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 110 0.11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC135 MFC135 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 135 0.135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC160 MFC160 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 160 0.16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC182 MFC182 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 182 0.182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC200 MFC200 Techsem module Thyristor Diode Modules Active Components 2000 to 2500 200 0.2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC250 MFC250 Techsem module Thyristor Diode Modules Active Components 1200 to 2500 250 0.25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC285 MFC285 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 285 0.285
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC500 MFC500 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 500 0.5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MFC570 MFC570 Techsem module Thyristor Diode Modules Active Components 1200 to 1800 570 0.57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
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Rectifier

Image Series/Type Manufacturer Product Group Category Main Category Blocking Voltage[V] Rated Current [A] Rated Current [mA] Product Feature Product Status
Techsem MDS50 MDS50 Techsem module Rectifier Active Components 800 to 1600 50 0.05
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDS75 MDS75 Techsem module Rectifier Active Components 800 to 1600 75 0.075
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDS100 MDS100 Techsem module Rectifier Active Components 800 to 1600 100 0.1
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDS150 MDS150 Techsem module Rectifier Active Components 800 to 1600 150 0.15
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
Techsem MDS200 MDS200 Techsem module Rectifier Active Components 800 to 1600 200 0.2
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Request
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