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SiC Diodes

Image Series/Type Manufacturer Product Group Category Main Category Housing Topology Blocking Voltage[V] Rated Current [A] Rated Current [mA] Rated Current [25°] Product Feature Product Status
SemiQ GHXS010A060S-D3 GHXS010A060S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Duel Diode Pack 600 10 63000 10
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS020A060S-D3 GHXS020A060S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Duel Diode Pack 600 20 63000 20
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS030A060S-D3 GHXS030A060S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Duel Diode Pack 600 30 63000 30
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V
in production
Request
SemiQ GHXS030A060S-D1E GHXS030A060S-D1E SemiQ SiC module SiC Diodes Active Components SOT-227 Rectifier Bridge 600 30 63000 30
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS015A120S-D1 GHXS015A120S-D1 SemiQ SiC module SiC Diodes Active Components SOT-227 Rectifier Bridge 1200 15 63000 15
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS015A120S-D3 GHXS015A120S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Duel Diode Pack 1200 15 63000 15
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS030A120S-D3 GHXS030A120S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Duel Diode Pack 1200 30 63000 30
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS030A120S-D1E GHXS030A120S-D1E SemiQ SiC module SiC Diodes Active Components SOT-227 Rectifier Bridge 1200 30 63000 30
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
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