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SiC Mosfets

Image Series/Type Manufacturer Product Group Category Main Category Housing Topology Blocking Voltage[V] RDS on [mOhm] Rated Current [A] Rated Current [mA] Rated Current [25°] Rated Current [100°] Operation Temperature[°C] Product Feature Product Status
SemiQ GCMX034C120S1-E1 GCMX034C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 34 51 51000 51 37 -55 to 175
• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ
 in production
Request
SemiQ GCMS034C120S1-E1 GCMS034C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 34 53 53000 53 38 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ
 in production
Request
SemiQ GCMX016B120B3H1P GCMX016B120B3H1P SemiQ SiC module SiC Mosfets Active Components B3 Full Bridge Module 1200 16.6 95 95000 95 82 -55 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections
 in production
Request
SemiQ GCMX008B120B3H1P GCMX008B120B3H1P SemiQ SiC module SiC Mosfets Active Components B3 Full Bridge Module 1200 8.6 120 120000 120 120 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections
 in production
Request
SemiQ GCMX014C120S1-E1 GCMX014C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 14.5 104 104000 104 75 -55 to 175
• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ
 in production
Request
SemiQ GCMX007C120S1-E1 GCMX007C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 7.4 192 192000 192 137 -55 to 175
• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ
 in production
Request
SemiQ GCMS014C120S1-E1 GCMS014C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 15 103 103000 103 74 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ
 in production
Request
SemiQ GCMS007C120S1-E1 GCMS007C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 7.3 189 189000 189 135 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ
 in production
Request
SemiQ GP3T080A120TS GP3T080A120TS SemiQ SiC discrete SiC Mosfets Active Components TSPAK Discrete 1200 80 27 27000 27 19 -55 to 175
• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving • Ceramic isolated back paddle
 in production
Request
SemiQ GP3T040A120TS GP3T040A120TS SemiQ SiC discrete SiC Mosfets Active Components TSPAK Discrete 1200 38 50 50000 50 36 -55 to 175
• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 300mJ • Driver source pin for gate driving • Ceramic isolated back paddle
 in production
Request
SemiQ GP3T020A120TS GP3T020A120TS SemiQ SiC discrete SiC Mosfets Active Components TSPAK Discrete 1200 18 89 89000 89 64 -55 to 175
• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 700mJ • Driver source pin for gate driving • Ceramic isolated back paddle
 in production
Request
SemiQ GP3T016A120TS GP3T016A120TS SemiQ SiC discrete SiC Mosfets Active Components TSPAK Discrete 1200 16 101 101000 101 72 -55 to 175
• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving • Ceramic isolated back paddle
 in production
Request
SemiQ GP3T034A120H GP3T034A120H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1200 32 62 62000 62 44 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving
 in production
Request
SemiQ GP3T017A120H GP3T017A120H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1200 15 120 120000 120 86 -55 to 175
• Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer creepage distance
 in production
Request
SemiQ GP3T014A120H GP3T014A120H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1200 14 133 133000 133 96 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving
 in production
Request
SemiQ GCMX016C120S1-E1 GCMX016C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 16.5 103 103000 103 74 -55 to 175
• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ
 in production
Request
SemiQ GCMX080C120S1-E1 GCMX080C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 84 28 28000 28 21 -55 to 175
• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ
 in production
Request
SemiQ GCMS080C120S1-E1 GCMS080C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 84 28 28000 28 21 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ
 in production
Request
SemiQ GCMX040C120S1-E1 GCMX040C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 39 53 53000 53 38 -55 to 175
• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ
 in production
Request
SemiQ GCMS040C120S1-E1 GCMS040C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 39 53 53000 53 38 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ
 in production
Request
No Image AS3T016A120H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1200 16 132 132000 132 95 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101
 in production
Request
SemiQ AS3T040A120H AS3T040A120H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1200 38 62 62000 62 44 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 330mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q103
 in production
Request
SemiQ GP2T020A120H GP2T020A120H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1200 20 119 119000 119 86 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving
 in production
Request
SemiQ GP2T040A120U GP2T040A120U SemiQ SiC discrete SiC Mosfets Active Components TO-247-3L Discrete 1200 37 63 63000 63 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*
 in production
Request
SemiQ GP2T040A120H GP2T040A120H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1200 37 63 63000 63 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
Request
SemiQ GP2T040A120J GP2T040A120J SemiQ SiC discrete SiC Mosfets Active Components TO-263-7L Discrete 1200 38 66 66000 66 49 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
Request
SemiQ GP2T080A120U GP2T080A120U SemiQ SiC discrete SiC Mosfets Active Components TO-247-3L Discrete 1200 77 35 35000 35 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*
 in production
Request
SemiQ GP2T080A120H GP2T080A120H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1200 77 35 35000 35 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design
 in production
Request
SemiQ GP2T080A120J GP2T080A120J SemiQ SiC discrete SiC Mosfets Active Components TO-263-7L Discrete 1200 77 35 35000 35 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving
 in production
Request
SemiQ GCMX003A120S3B1-N GCMX003A120S3B1-N SemiQ SiC module SiC Mosfets Active Components S3 Half Bridge Module 1200 3 625 625000 625 -40 to 175
• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • AlN Isolated baseplate
 in production
Request
SemiQ GCMX003A120S7B1 GCMX003A120S7B1 SemiQ SiC module SiC Mosfets Active Components S7 Half Bridge Half Bridge Module 1200 3 529 529000 529 -40 to 175
• 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Isolated baseplate
 in production
Request
SemiQ GCMX005A120B3B1P GCMX005A120B3B1P SemiQ SiC module SiC Mosfets Active Components B3 Half Bridge Module 1200 4.4 383 383000 383 331 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX005A120S3B1-N GCMX005A120S3B1-N SemiQ SiC module SiC Mosfets Active Components S3 Half Bridge Module 1200 4.8 424 424000 424 -40 to 175
• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • AlN Isolated baseplate
 in production
Request
SemiQ GCMX005A120S7B1 GCMX005A120S7B1 SemiQ SiC module SiC Mosfets Active Components S7 Half Bridge Half Bridge Module 1200 4.9 348 348000 348 -40 to 175
• 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Isolated baseplate
 in production
Request
SemiQ GCMX008C120S1-E1 GCMX008C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 8.4 188 188000 188 134 -55 to 175
• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ
 in production
Request
SemiQ GCMS008C120S1-E1 GCMS008C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 8.4 189 189000 189 135 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ
 in production
Request
SemiQ GCMX010A120B3H1P GCMX010A120B3H1P SemiQ SiC module SiC Mosfets Active Components B3 Full Bridge Module 1200 8.9 201 201000 201 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections
 in production
Request
SemiQ GCMS010B120S1-E1 GCMS010B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 9 218 218000 218 157 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX010B120S1-E1 GCMX010B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 10 202 202000 202 146 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX010A120B3B1P GCMX010A120B3B1P SemiQ SiC module SiC Mosfets Active Components B3 Half Bridge Module 1200 9 173 173000 173 151 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX010A120B2B1P GCMX010A120B2B1P SemiQ SiC module SiC Mosfets Active Components B2 Half Bridge Module 1200 9 214 214000 214 186 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMS016C120S1-E1 GCMS016C120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 16.5 103 103000 103 74 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ
 in production
Request
SemiQ GCMX020A120B2H2P GCMX020A120B2H2P SemiQ SiC module SiC Mosfets Active Components B2 Full Bridge Module 1200 18 102 102000 102 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals
 in production
Request
SemiQ GCMX020A120B2H1P GCMX020A120B2H1P SemiQ SiC module SiC Mosfets Active Components B2 Full Bridge Module 1200 18 102 102000 102 88 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX020A120B3H1P GCMX020A120B3H1P SemiQ SiC module SiC Mosfets Active Components B3 Full Bridge Module 1200 18.1 93 93000 93 81 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX020A120B2B1P GCMX020A120B2B1P SemiQ SiC module SiC Mosfets Active Components B2 Half Bridge Module 1200 19 102 102000 102 89 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ SiC module SiC Mosfets Active Components SOT-227 Module 1200 20 113 113000 113 81 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 20 113 113000 113 81 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 40 57 57000 57 42 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ SiC module SiC Mosfets Active Components SOT-227 Module 1200 37 57 57000 57 42 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX040A120B2B1P GCMX040A120B2B1P SemiQ SiC module SiC Mosfets Active Components B2 Half Bridge Module 1200 38 56 56000 56 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections
 in production
Request
SemiQ GCMX040A120B2H2P GCMX040A120B2H2P SemiQ SiC module SiC Mosfets Active Components B2 Full Bridge Module 1200 38 56 56000 56 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals
 in production
Request
SemiQ GCMX040A120B3H1P GCMX040A120B3H1P SemiQ SiC module SiC Mosfets Active Components B3 Full Bridge Module 1200 38 53 53000 53 46 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX040A120B2H1P GCMX040A120B2H1P SemiQ SiC module SiC Mosfets Active Components B2 Full Bridge Module 1200 38 56 56000 56 49 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX080A120B2H2P GCMX080A120B2H2P SemiQ SiC module SiC Mosfets Active Components B2 Full Bridge Module 1200 77 27 27000 27 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals
 in production
Request
SemiQ GCMX080A120B2H1P GCMX080A120B2H1P SemiQ SiC module SiC Mosfets Active Components B2 Full Bridge Module 1200 77 27 27000 27 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections
 in production
Request
SemiQ GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 77 30 30000 30 22 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 80 30 30000 30 22 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ AS2T030A170H AS2T030A170H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1700 28 83 83000 83 61 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,900 V • Avalanche tested to 600mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101
 in production
Request
SemiQ GP2T030A170H GP2T030A170H SemiQ SiC discrete SiC Mosfets Active Components TO-247-4L Discrete 1700 31 83 83000 83 61 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,900 V • Avalanche tested to 600mJ* • Driver source pin for gate driving
 in production
Request
SemiQ GCMX030A170S1-E1 GCMX030A170S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1700 31 66 66000 66 48 -55 to 175
• High speed switching • Simple to drive • Avalanche tested to 600mJ* • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX015A170S1-E1 GCMX015A170S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1700 16 123 123000 123 89 -55 to 175
• High speed switching • Simple to drive • Avalanche tested to 600mJ* • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX005A170S3B1-N GCMX005A170S3B1-N SemiQ SiC module SiC Mosfets Active Components S3 Half Bridge Module 1700 5.3 397 397000 397 -40 to 175
• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1900V • Kelvin reference for stable operation • AlN Isolated baseplate
 in production
Request
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SiC Diodes

Image Series/Type Manufacturer Product Group Category Main Category Housing Topology Blocking Voltage[V] Rated Current [A] Rated Current [mA] Rated Current [25°] Operation Temperature[°C] Product Feature Product Status
SemiQ GP3D010A065B GP3D010A065B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 650 10 10000 10 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D010A065A GP3D010A065A SemiQ SiC discrete SiC Diodes Active Components TO-220-2L Discrete 650 10 10000 10 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D010A065D GP3D010A065D SemiQ SiC discrete SiC Diodes Active Components TO-263-2L (D2PAK) Discrete 650 10 10000 10 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D012A065B GP3D012A065B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 650 12 12000 12 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ
 in production
Request
SemiQ GP3D012A065A GP3D012A065A SemiQ SiC discrete SiC Diodes Active Components TO-220-2L Discrete 650 12 12000 12 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D016A065U GP3D016A065U SemiQ SiC discrete SiC Diodes Active Components TO-247-3L Dual Diode Pack 650 16 16000 16 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D020A065A GP3D020A065A SemiQ SiC discrete SiC Diodes Active Components TO-220-2L Discrete 650 20 20000 20 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D020A065B GP3D020A065B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 650 20 20000 20 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D020A065U GP3D020A065U SemiQ SiC discrete SiC Diodes Active Components TO-247-3L Dual Diode Pack 650 20 20000 20 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D024A065U GP3D024A065U SemiQ SiC discrete SiC Diodes Active Components TO-247-3L Dual Diode Pack 650 24 24000 24 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg
 in production
Request
SemiQ GP3D030A065B GP3D030A065B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 650 30 30000 30 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ
 in production
Request
SemiQ GP3D040A065U GP3D040A065U SemiQ SiC discrete SiC Diodes Active Components TO-247-3L Dual Diode Pack 650 40 40000 40 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D050A065B GP3D050A065B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 650 50 50000 50 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D006A065A GP3D006A065A SemiQ SiC discrete SiC Diodes Active Components TO-220-2L Discrete 650 6 6000 6 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D006A065F GP3D006A065F SemiQ SiC discrete SiC Diodes Active Components TO-220-2L-FP Discrete 650 6 6000 6 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ* • All parts tested to greater than 715V • Isolated case
 in production
Request
SemiQ GP3D008A065A GP3D008A065A SemiQ SiC discrete SiC Diodes Active Components TO-220-2L Discrete 650 8 8000 8 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D008A065D GP3D008A065D SemiQ SiC discrete SiC Diodes Active Components TO-263-2L (D2PAK) Discrete 650 8 8000 8 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
Request
SemiQ GP3D008A065F GP3D008A065F SemiQ SiC discrete SiC Diodes Active Components TO-220-2L-FP Discrete 650 8 8000 8 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ* • All parts tested to greater than 715V • Isolated case
 in production
Request
SemiQ GP3D010A120S GP3D010A120S SemiQ SiC discrete SiC Diodes Active Components DO-214AB Discrete 1200 10 10000 10 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • All parts tested to 1400V
 in production
Request
SemiQ GP3D010A120A GP3D010A120A SemiQ SiC discrete SiC Diodes Active Components TO-220-2L Discrete 1200 10 10000 10 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D010A120B GP3D010A120B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1200 10 10000 10 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D015A120B GP3D015A120B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1200 15 15000 15 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D015A120A GP3D015A120A SemiQ SiC discrete SiC Diodes Active Components TO-220-2L Discrete 1200 15 15000 15 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D020A120A GP3D020A120A SemiQ SiC discrete SiC Diodes Active Components TO-220-2L Discrete 1200 20 20000 20 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D020A120B GP3D020A120B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1200 20 20000 20 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D020A120U GP3D020A120U SemiQ SiC discrete SiC Diodes Active Components TO-247-3L Dual Diode Pack 1200 20 20000 20 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D030A120B GP3D030A120B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1200 30 30000 30 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D030A120U GP3D030A120U SemiQ SiC discrete SiC Diodes Active Components TO-247-3L Dual Diode Pack 1200 30 30000 30 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D040A120U GP3D040A120U SemiQ SiC discrete SiC Diodes Active Components TO-247-3L Dual Diode Pack 1200 40 40000 40 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D050A120B GP3D050A120B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1200 50 50000 50 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D060A120U GP3D060A120U SemiQ SiC discrete SiC Diodes Active Components TO-247-3L Dual Diode Pack 1200 60 60000 60 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V
 in production
Request
SemiQ GP3D005A170B GP3D005A170B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1700 5 5000 5 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ
 in production
Request
SemiQ GP3D010A170B GP3D010A170B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1700 10 10000 10 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current
 in production
Request
SemiQ GP3D020A170B GP3D020A170B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1700 20 20000 20 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V
 in production
Request
SemiQ GP3D050B170B GP3D050B170B SemiQ SiC discrete SiC Diodes Active Components TO-247-2L Discrete 1700 50 50000 50 -55 to 175
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 1250mJ* • All parts tested to greater than 1,870V
 in production
Request
SemiQ GHXS010A060S-D3 GHXS010A060S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 600 10 10000 10 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS020A060S-D3 GHXS020A060S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 600 20 20000 20 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS030A060S-D3 GHXS030A060S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 600 30 30000 30 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V
in production
Request
SemiQ GHXS030A060S-D1E GHXS030A060S-D1E SemiQ SiC module SiC Diodes Active Components SOT-227 Rectifier Bridge 600 30 30000 30 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS050A060S-D3 GHXS050A060S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 600 50 50000 50 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS050B065S-D3 GHXS050B065S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 650 50 50000 50 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS100B065S-D3 GHXS100B065S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 650 100 100000 100 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Request
SemiQ GHXS015A120S-D1 GHXS015A120S-D1 SemiQ SiC module SiC Diodes Active Components SOT-227 Rectifier Bridge 1200 15 15000 15 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS015A120S-D3 GHXS015A120S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 1200 15 15000 15 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS030A120S-D3 GHXS030A120S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 1200 30 30000 30 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS030A120S-D1E GHXS030A120S-D1E SemiQ SiC module SiC Diodes Active Components SOT-227 Rectifier Bridge 1200 30 30000 30 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS045A120S-D3 GHXS045A120S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 1200 45 45000 45 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS050B120S-D3 GHXS050B120S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 1200 50 50000 50 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS060A120S-D3 GHXS060A120S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 1200 60 60000 60 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation
in production
Request
SemiQ GHXS100B120S-D3 GHXS100B120S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Dual Diode Pack 1200 100 100000 100 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS300A120S7D5 GHXS300A120S7D5 SemiQ SiC module SiC Diodes Active Components S7 Half Bridge Half Bridge 1200 300 300000 300 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS400A120S7D5 GHXS400A120S7D5 SemiQ SiC module SiC Diodes Active Components S7 Half Bridge Half Bridge 1200 400 400000 400 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Request
SemiQ GHXS050B170S-D3 GHXS050B170S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Discrete 1700 50 50000 50 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1,870V
 in production
Request
SemiQ GHXS100B170S-D3 GHXS100B170S-D3 SemiQ SiC module SiC Diodes Active Components SOT-227 Discrete 1700 100 100000 100 -55 to 175
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1,870V
 in production
Request
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