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SiC Mosfets

Series/Type	Manufacturer	Product Group	Category	Main Category	Housing	Topology	Blocking Voltage[V]	RDS on [mOhm]	Rated Current [A]	Rated Current [mA]	Rated Current [25°]	Rated Current [100°]	Operation Temperature[°C]	Product Feature	Product Status
GP2T020A120X-SBT	SemiQ	bare die / Known good die	SiC Mosfets	Active Components	sawn on blue tape		1200	20							in production	Request
GP2T020A120X	SemiQ	bare die / Known good die	SiC Mosfets	Active Components	unsawn wafer		1200	20							in production	Request
GP2T040A120X-SBT	SemiQ	bare die / Known good die	SiC Mosfets	Active Components	sawn on blue tape		1200	40							in production	Request
GP2T040A120X	SemiQ	bare die / Known good die	SiC Mosfets	Active Components	unsawn wafer		1200	40							in production	Request
GP2T080A120X-SBT	SemiQ	bare die / Known good die	SiC Mosfets	Active Components	sawn on blue tape		1200	80							in production	Request
GP2T080A120X	SemiQ	bare die / Known good die	SiC Mosfets	Active Components	unsawn wafer		1200	80							in production	Request
AS2T030A170H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1700	28	83	83000	83	61	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,900 V • Avalanche tested to 600mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101	In production	Request
AS3T016A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	16	132	132000	132	95	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101	In production	Request
AS3T040A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	38	62	62000	62	44	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 330mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q103	In production	Request
GP2T020A120U	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-3L	Discrete	1200	20	119	119000	119	86			in production	Request
GP2T020A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	20	119	119000	119	86	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving	in production	Request
GP2T040A120U	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-3L	Discrete	1200	37	63	63000	63	47	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*	in production	Request
GP2T040A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	37	63	63000	63	47	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving	in production	Request
GP2T040A120J	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-7L	Discrete	1200	38	66	66000	66	49	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving	in production	Request
GP2T080A120U	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-3L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*	in production	Request
GP2T080A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design	in production	Request
GP2T080A120J	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-7L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving	in production	Request
GCMS010B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	9	218	218000	218	157	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX010B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	10	202	202000	202	146	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMS080B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	77	30	30000	30	22	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMS040B120S1-E1	SemiQ	SiC module	SiC Mosfets	Active Components	SOT-227	Module	1200	37	57	57000	57	42	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX040B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	40	57	57000	57	42	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX080B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	80	30	30000	30	22	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMS020B120S1-E1	SemiQ	SiC module	SiC Mosfets	Active Components	SOT-227	Module	1200	20	113	113000	113	81	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX020B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	20	113	113000	113	81	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX020A120B2B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Half Bridge Module	1200	19	102	102000	102	89	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX010A120B2B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Half Bridge Module	1200	9	214	214000	214	186	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX010A120B3B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Half Bridge Module	1200	9	173	173000	173	151	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX005A120B3B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Half Bridge Module	1200	4.4	383	383000	383	331	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX040A120B3H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Full Bridge Module	1200	38	53	53000	53	46	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX020A120B3H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Full Bridge Module	1200	18.1	93	93000	93	81	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX020A120B2H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Full Bridge Module	1200	18	102	102000	102	88	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX040A120B2H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Full Bridge Module	1200	38	56	56000	56	49	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request

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SiC Diodes

Series/Type	Manufacturer	Product Group	Category	Main Category	Housing	Topology	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Rated Current [25°]	Dimensions L [mm]	Dimensions W/D [mm]	Product Feature	Product Status
GP3D006A065X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		650	6	63000	6	1.37	1.37	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D008A065X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		650	8	63000	8	1.54	1.54	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D010A065X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		650	10	63000	10	1.78	1.78	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D012A065X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		650	12	63000	12	1.5	2.9	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D020A065X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		650	20	63000	20	2.39	2.39	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D030A065X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		650	30	63000	30	2.86	2.86	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D050A065X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		650	50	63000	50	3.5	3.5	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D010A120X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		1200	10	63000	10	2.4	2.4	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D015A120X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		1200	15	63000	15	2.12	4.1	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D020A120X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		1200	20	63000	20	3.25	3.25	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D030A120X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		1200	30	63000	30	3.9	3.9	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D050A120X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		1200	50	63000	50	4.93	4.93	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D005A170X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		1700	5	63000	5	2.4	2.4	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D010A170X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		1700	10	63000	10	2.91	2.91	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D020A170X-SBT	SemiQ	bare die / Known good die	SiC Diodes	Active Components	sawn on blue tape		1700	20	63000	20	3.95	3.95	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf	in production	Request
GP3D006A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		650	6	63000	6			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V	in production	Request
GP3D006A065D	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-263		650	6	63000	6				in production	Request
GP3D008A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		650	8	63000	8			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V	in production	Request
GP3D008A065D	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-263		650	8	63000	8			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V	in production	Request
GP3D010A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		650	10	63000	10			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D010A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		650	10	63000	10			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D010A065D	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-263		650	10	63000	10			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D012A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		650	12	63000	12			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V	in production	Request
GP3D012A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		650	12	63000	12			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ	in production	Request
GP3D020A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		650	20	63000	20			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D020A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		650	20	63000	20			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D030A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		650	30	63000	30			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ	in production	Request
GP3D050A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		650	50	63000	50			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V	in production	Request
GP3D020A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L		650	20	63000	20			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D024A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L		650	24	63000	24			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg	in production	Request
GP3D040A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L		650	40	63000	40			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D010A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		1200	10	63000	10			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V	in production	Request
GP3D010A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1200	10	63000	10			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V	in production	Request
GP3D015A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		1200	15	63000	15			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V	in production	Request
GP3D015A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1200	15	63000	15			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		1200	20	63000	20			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1200	20	63000	20			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V	in production	Request
GP3D030A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1200	30	63000	30			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V	in production	Request
GP3D040A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1200	40	63000	40				in production	Request
GP3D050A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1200	50	63000	50			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L		1200	20	63000	20			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D030A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L		1200	30	63000	30			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D040A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L		1200	40	63000	40			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D060A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L		1200	60	63000	60			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D005A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1700	5	63000	5			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ	in production	Request
GP3D010A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1700	10	63000	10			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current	in production	Request
GP3D020A170A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L		1700	20	63000	20				in production	Request
GP3D020A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L		1700	20	63000	20			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V	in production	Request
GP3D016A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L		650	16	63000	16			• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V	in production	Request
GP3D006A065F	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220FP-2L		650	6	63000	6				in production	Request
GP3D008A065F	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220FP-2L		650	8	63000	8				in production	Request
GHXS010A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	600	10	63000	10			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS020A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	600	20	63000	20			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS030A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	600	30	63000	30			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V	in production	Request
GHXS030A060S-D1E	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	600	30	63000	30			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS050A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	600	50	63000	50			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS050B065S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	650	50	63000	50			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS100B065S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	650	100	63000	100			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS015A120S-D1	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	1200	15	63000	15			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS015A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	1200	15	63000	15			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS030A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	1200	30	63000	30			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS030A120S-D1E	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	1200	30	63000	30			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS045A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	1200	45	63000	45			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS050B120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	1200	50	63000	50			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS060A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	1200	60	63000	60			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation	in production	Request
GHXS100B120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Duel Diode Pack	1200	100	63000	100			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS300A120S7D5	SemiQ	SiC module	SiC Diodes	Active Components	S7	Half Bridge	1200	300	63000	300			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS400A120S7D5	SemiQ	SiC module	SiC Diodes	Active Components	S7	Half Bridge	1200	400	63000	400			• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request