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Active Components

IGBT

Series/Type	Manufacturer	Product Group	Category	Main Category	Housing	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Rated Current [25°]	Operation Temperature[°C]	Product Feature
GK10PI60C6H	Silver Micro	module	IGBT	Active Components	C6	600	10	0.01	10	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK10PI60T5H	Silver Micro	module	IGBT	Active Components	T5	600	10	0.01	10	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT10RFF120B2H	Silver Micro	module	IGBT	Active Components	B2	1200	10	0.01	10	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT10PI120B3H	Silver Micro	module	IGBT	Active Components	B3	1200	10	0.01	10	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT10PI120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	10	0.01	10	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT10PI120B2H	Silver Micro	module	IGBT	Active Components	B2	1200	10	0.01	10	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT10FF120C6H	Silver Micro	module	IGBT	Active Components	C6	1200	10	0.01	10	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT10PI120C6H	Silver Micro	module	IGBT	Active Components	C6	1200	10	0.01	10	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT10PI120B2FH	Silver Micro	module	IGBT	Active Components	B2F	1200	10	0.01	10	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT15PI120B2FH	Silver Micro	module	IGBT	Active Components	B2F	1200	15	0.015	15	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT15PI120B3H	Silver Micro	module	IGBT	Active Components	B3	1200	15	0.015	15	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOATested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement	Request
GT15FF120C6H	Silver Micro	module	IGBT	Active Components	C6	1200	15	0.015	15	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT15PI120C6H	Silver Micro	module	IGBT	Active Components	C6	1200	15	0.015	15	25 to 150	- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT15PI120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	15	0.015	15	25 to 150	Short Circuit Rated >10μs - Low Saturation Voltage: VCE (sat) = 1.90V @ IC = 15A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT15FF120A1H	Silver Micro	module	IGBT	Active Components	A1	1200	15	0.015	15	25 to 150	Short Circuit Rated >10μs - Low Saturation Voltage: VCE (sat) = 1.90V @ IC = 15A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK20PI60B2FH	Silver Micro	module	IGBT	Active Components	B2F	600	20	0.02	20	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK20PI60C6H	Silver Micro	module	IGBT	Active Components	C6	600	20	0.02	20	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK20PI60T5H	Silver Micro	module	IGBT	Active Components	T5	600	20	0.02	20	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT25FF120B3H	Silver Micro	module	IGBT	Active Components	B3	1200	25	0.025	25	25 to 150	Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT25PI120B9H	Silver Micro	module	IGBT	Active Components	B9	1200	25	0.025	25	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT25PI120C6H	Silver Micro	module	IGBT	Active Components	C6	1200	25	0.025	25	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT25PI120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	25	0.025	25	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK30PI60B9H	Silver Micro	module	IGBT	Active Components	B9	600	30	0.03	30	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK30PI60B3H	Silver Micro	module	IGBT	Active Components	B3	600	30	0.03	30	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK30FF60C6H	Silver Micro	module	IGBT	Active Components	C6	600	30	0.03	30	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK35FF60A1H	Silver Micro	module	IGBT	Active Components	A1	600	35	0.035	35	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK35PI60T5H	Silver Micro	module	IGBT	Active Components	T5	600	35	0.035	35	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK35FB60A1H	Silver Micro	module	IGBT	Active Components	A1	600	35	0.035	35	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT35PI120B9H	Silver Micro	module	IGBT	Active Components	B9	1200	35	0.035	35	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT35FF120C6H	Silver Micro	module	IGBT	Active Components	C6	1200	35	0.035	35	25 to 175	- Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT40HF120T1VH	Silver Micro	module	IGBT	Active Components	T1V	1200	40	0.04	40	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT40FB120A1H	Silver Micro	module	IGBT	Active Components	A1	1200	40	0.04	40	25 to 150	Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT40FF120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	40	0.04	40	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT40PI120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	40	0.04	40	25 to 150	Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT40RFF120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	40	0.04	40	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT40FF120B3H	Silver Micro	module	IGBT	Active Components	B3	1200	40	0.04	40	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK50FF60A1H	Silver Micro	module	IGBT	Active Components	A1	600	50	0.05	50	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT50FF65B2H	Silver Micro	module	IGBT	Active Components	B2	650	50	0.05	50	25 to 150	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT50FF120A1H	Silver Micro	module	IGBT	Active Components	A1	1200	50	0.05	50	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF50HH120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	50	0.05	50	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT50PI120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	50	0.05	50	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT50FF120B9H	Silver Micro	module	IGBT	Active Components	B9	1200	50	0.05	50	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT50FF120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	50	0.05	50	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF50HF120T1VH	Silver Micro	module	IGBT	Active Components	T1V	1200	50	0.05	50	25 to 150	NPT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF75HF60T1VH	Silver Micro	module	IGBT	Active Components	T1V	600	75	0.075	75	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75CU170T1VH	Silver Micro	discrete	IGBT	Active Components	T1V	1700	75	0.075	75	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK75FF60A1H	Silver Micro	module	IGBT	Active Components	A1	600	75	0.075	75	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK75FF60T5H	Silver Micro	module	IGBT	Active Components	T5	600	75	0.075	75	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK75PI60T6H	Silver Micro	module	IGBT	Active Components	T6	600	75	0.075	75	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK75HF60T1VH	Silver Micro	module	IGBT	Active Components	T1V	600	75	0.075	75	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GTM75FF120B9H	Silver Micro	module	IGBT	Active Components	B9	1200	75	0.075	75	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF75HF120T1H	Silver Micro	module	IGBT	Active Components	T1	1200	75	0.075	75	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75HF120T1H	Silver Micro	module	IGBT	Active Components	T1	1200	75	0.075	75	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75HF120T1NH	Silver Micro	module	IGBT	Active Components	T1N	1200	75	0.075	75	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated > 10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF75HH120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	75	0.075	75	25 to 150	NPT Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75FF120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	75	0.075	75	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75FF120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	75	0.075	75	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75PI120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	75	0.075	75	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75FF120B9H	Silver Micro	module	IGBT	Active Components	B9	1200	75	0.075	75	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF75HF120T1VH	Silver Micro	module	IGBT	Active Components	T1V	1200	75	0.075	75	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75CU120T1VH	Silver Micro	discrete	IGBT	Active Components	T1V	1200	75	0.075	75	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT75HF120T1VH	Silver Micro	module	IGBT	Active Components	T1V	1200	75	0.075	75	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF100HF60T1VH	Silver Micro	module	IGBT	Active Components	T1V	600	100	0.1	100	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK100HF60T1VH	Silver Micro	module	IGBT	Active Components	T1V	600	100	0.1	100	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100CL120T1VH	Silver Micro	discrete	IGBT	Active Components	T1V	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK100PI60T6H	Silver Micro	module	IGBT	Active Components	T6	600	100	0.1	100	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GTM100TL65B9H	Silver Micro	module	IGBT	Active Components	B9	650	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF100HF120T1NH	Silver Micro	module	IGBT	Active Components	T1N	1200	100	0.1	100	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100HF120T1NH	Silver Micro	module	IGBT	Active Components	T1N	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100CU120B5H	Silver Micro	discrete	IGBT	Active Components	B5	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100SG120B5H	Silver Micro	module	IGBT	Active Components	B5	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated > 10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100FF120T5H	Silver Micro	module	IGBT	Active Components	T5	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100FF120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100PI120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF100HF120T1VH	Silver Micro	module	IGBT	Active Components	T1V	1200	100	0.1	100	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100CU120T1VH	Silver Micro	discrete	IGBT	Active Components	T1V	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100HF120T1VH	Silver Micro	module	IGBT	Active Components	T1V	1200	100	0.1	100	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT100TD120T1VH	Silver Micro	module	IGBT	Active Components	T1V	1200	100	0.1	100	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF100HF120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	100	0.1	100	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement	Request
GTR150HF65T1VH	Silver Micro	module	IGBT	Active Components	T1V	650	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150CU65T1VH	Silver Micro	discrete	IGBT	Active Components	T1V	650	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150HF65T1VH	Silver Micro	module	IGBT	Active Components	T1V	650	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GTR150TL65T2SH	Silver Micro	module	IGBT	Active Components	T2S	650	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150HF120T1VH	Silver Micro	module	IGBT	Active Components	T1V	1200	150	0.15	150	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150CL120T1VH	Silver Micro	discrete	IGBT	Active Components	T1V	1200	150	0.15	150	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF150CU120T2VH	Silver Micro	discrete	IGBT	Active Components	T2V	1200	150	0.15	150	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF150HF120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	150	0.15	150	25 to 150	NPT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Req	Request
GT150CU120T2VH	Silver Micro	discrete	IGBT	Active Components	T2V	1200	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150HF170T2NH	Silver Micro	module	IGBT	Active Components	T2N	1700	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK150HF60T1VH	Silver Micro	module	IGBT	Active Components	T1V	600	150	0.15	150	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GTM150TL65B9H	Silver Micro	module	IGBT	Active Components	B9	650	150	0.15	150	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150HF120T1NH	Silver Micro	module	IGBT	Active Components	T1N	1200	150	0.15	150	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150CU120T1VH	Silver Micro	discrete	IGBT	Active Components	T1V	1200	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF150HF120A5H	Silver Micro	module	IGBT	Active Components	A5	1200	150	0.15	150	25 to 150	- NPT IGBT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150TT120A8H	Silver Micro	module	IGBT	Active Components	A8	1200	150	0.15	150	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150CE120T1H	Silver Micro	module	IGBT	Active Components	T1	1200	150	0.15	150	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF150HH120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	150	0.15	150	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150CZ120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150FF120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150PI120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150HF120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	150	0.15	150	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT150HF170T2VH	Silver Micro	module	IGBT	Active Components	T2V	1700	150	0.15	150	25 to 175	Short Circuit Rated ＞10μs - Low Saturation Voltage: VCE (sat) = 2.30V @ IC = 150A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF200CU120T2VH	Silver Micro	discrete	IGBT	Active Components	T2V	1200	200	0.2	200	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF200HF120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	200	0.2	200	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GK200HF60T1VH	Silver Micro	module	IGBT	Active Components	T1V	600	200	0.2	200	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GTR200HF65T1VH	Silver Micro	module	IGBT	Active Components	T1V	650	200	0.2	200	25 to 175	Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GTR200TL65T2SH	Silver Micro	module	IGBT	Active Components	T2S	650	200	0.2	200	25 to 175	Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement	Request
GT200TL65A8H	Silver Micro	module	IGBT	Active Components	A8	650	200	0.2	200	25 to 175	Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement	Request
GT200FF65T6H	Silver Micro	module	IGBT	Active Components	T6	650	200	0.2	200	25 to 175	Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement	Request
GT200CE120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	200	0.2	200	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT200FF120A8H	Silver Micro	module	IGBT	Active Components	A8	1200	200	0.2	200	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT200TT120A8H	Silver Micro	module	IGBT	Active Components	A8	1200	200	0.2	200	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT200HF120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	200	0.2	200	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT200CZ120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	200	0.2	200	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT200FF120T6H	Silver Micro	module	IGBT	Active Components	T6	1200	200	0.2	200	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT200CU120T2VH	Silver Micro	discrete	IGBT	Active Components	T2V	1200	200	0.2	200	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT200HF120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	200	0.2	200	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT200TD120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	200	0.2	200	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GTR300TL65T2SH	Silver Micro	module	IGBT	Active Components	T2S	650	300	0.3	300	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated > 10ps - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2xIc) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF300HF120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	300	0.3	300	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement	Request
GF300CE120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	300	0.3	300	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement	Request
GF300CU120T2VH	Silver Micro	discrete	IGBT	Active Components	T2V	1200	300	0.3	300	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF300HF120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	300	0.3	300	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF300CL120T2VH	Silver Micro	discrete	IGBT	Active Components	T2V	1200	300	0.3	300	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300CE120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	300	0.3	300	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300HF120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	300	0.3	300	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300TL120A8H	Silver Micro	module	IGBT	Active Components	A8	1200	300	0.3	300	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - VCE(sat) with Positive Temperature Coefficient - Reliable Mechanical Design with Injection Moulded Terminals and Reliable Internal Connections - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300TT120A8H	Silver Micro	module	IGBT	Active Components	A8	1200	300	0.3	300	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300CH120T9H	Silver Micro	discrete	IGBT	Active Components	T9	1200	300	0.3	300	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Copper Wire Bonding on Power Terminal - Lead Free, Compliant with RoHS Requirement	Request
GT300HF120T9H	Silver Micro	module	IGBT	Active Components	T9	1200	300	0.3	300	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300CL120T2VH	Silver Micro	discrete	IGBT	Active Components	T2V	1200	300	0.3	300	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300CU120T2VH	Silver Micro	discrete	IGBT	Active Components	T2V	1200	300	0.3	300	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300HF120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	300	0.3	300	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300TD120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	300	0.3	300	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300HF170T9H	Silver Micro	module	IGBT	Active Components	T9	1700	300	0.3	300	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT300HF170T2VH	Silver Micro	module	IGBT	Active Components	T2V	1700	300	0.3	300	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT400HF65T2NH	Silver Micro	module	IGBT	Active Components	T2N	650	400	0.4	400	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT400DC120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	400	0.4	400	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF400SD120T2ZH	Silver Micro	discrete	IGBT	Active Components	T2Z	1200	400	0.4	400	25 to 150	- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT400HF65T2VH	Silver Micro	module	IGBT	Active Components	T2V	650	400	0.4	400	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT400SD65T2ZH	Silver Micro	discrete	IGBT	Active Components	T2Z	650	400	0.4	400	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GTR400HF65A5H	Silver Micro	module	IGBT	Active Components	A5	650	400	0.4	400	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>5μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT400HF120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	400	0.4	400	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT400TT120A8H	Silver Micro	module	IGBT	Active Components	A8	1200	400	0.4	400	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Mixed Voltage Component Topology - Lead Free, Compliant with RoHS Requirement	Request
GT400HF120T2VH	Silver Micro	module	IGBT	Active Components	T2V	1200	400	0.4	400	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT400SD120T2ZH	Silver Micro	discrete	IGBT	Active Components	T2Z	1200	400	0.4	400	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT400HF170T2NH	Silver Micro	module	IGBT	Active Components	T2N	1700	400	0.4	400	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated ＞ 10μs - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT450CE120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	450	0.45	450	25 to 175	- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT450CL120T2NH	Silver Micro	discrete	IGBT	Active Components	T2N	1200	450	0.45	450	25 to 175	- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT450HF65T9H	Silver Micro	module	IGBT	Active Components	T9	650	450	0.45	450	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT450CU120T2NH	Silver Micro	discrete	IGBT	Active Components	T2N	1200	450	0.45	450	25 to 175	- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT450HF120T2NH	Silver Micro	module	IGBT	Active Components	T2N	1200	450	0.45	450	25 to 175	- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT450CH120T9H	Silver Micro	discrete	IGBT	Active Components	T9	1200	450	0.45	450	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Copper Wire Bonding on Power Terminal - Lead Free, Compliant with RoHS Requirement	Request
GT450HF120T9H	Silver Micro	module	IGBT	Active Components	T9	1200	450	0.45	450	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT450HF120A4H	Silver Micro	module	IGBT	Active Components	A4	1200	450	0.45	450	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT600SD170T2ZH	Silver Micro	discrete	IGBT	Active Components	T2Z	1700	600	0.6	600	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT600HF65T2NH	Silver Micro	module	IGBT	Active Components	T2N	650	600	0.6	600	25 to 175	- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT600HF65T9H	Silver Micro	module	IGBT	Active Components	T9	650	600	0.6	600	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GF600SD120T2ZH	Silver Micro	discrete	IGBT	Active Components	T2Z	1200	600	0.6	600	25 to 150	Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT600SD120T2ZH	Silver Micro	discrete	IGBT	Active Components	T2Z	1200	600	0.6	600	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated> 10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT600CH120T9H	Silver Micro	discrete	IGBT	Active Components	T9	1200	600	0.6	600	25 to 175	Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT600HF120T9H	Silver Micro	module	IGBT	Active Components	T9	1200	600	0.6	600	25 to 175	- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT600HF170T9H	Silver Micro	module	IGBT	Active Components	T9	1700	600	0.6	600	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request
GT800SD65T2ZH	Silver Micro	discrete	IGBT	Active Components	T2Z	650	800	0.8	800	25 to 175	Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requiremen	Request
GT900SD120T2ZH	Silver Micro	discrete	IGBT	Active Components	T2Z	1200	900	0.9	900	25 to 175	Field Stop Trench Gate IGBTShort Circuit Rated>10us - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2xIc) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement	Request

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Si Thyristors

Series/Type	Manufacturer	Product Group	Category	Main Category	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Product Feature	Product Status
Y24KPA	Techsem	capsule	Si Thyristors	Active Components	400	600	0.6	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y30KPA	Techsem	capsule	Si Thyristors	Active Components	400	1000	1	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y38KPA	Techsem	capsule	Si Thyristors	Active Components	400	1500	1.5	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y24KPC	Techsem	capsule	Si Thyristors	Active Components	600 to 1000	500	0.5	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y30KPC	Techsem	capsule	Si Thyristors	Active Components	600 to 1000	1000	1	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y38KPC	Techsem	capsule	Si Thyristors	Active Components	600 to 1000	1500	1.5	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y50KPC	Techsem	capsule	Si Thyristors	Active Components	600 to 1000	2500	2.5		In Production	Request
Y65KPC	Techsem	capsule	Si Thyristors	Active Components	600 to 1000	3000	3	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y76KPC	Techsem	capsule	Si Thyristors	Active Components	600 to 1000	4000	4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y24KPE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	400	0.4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y30KPE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	600	0.6	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y38KPE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	1000	1	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y50KPE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	1800	1.8	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y65KPE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	2800	2.8	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y76KPE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	4000	4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
H38KPR	Techsem	capsule	Si Thyristors	Active Components	6000 to 6500	400	0.4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
H50KPR	Techsem	capsule	Si Thyristors	Active Components	6000 to 6500	900	0.9	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
H65KPR	Techsem	capsule	Si Thyristors	Active Components	6000 to 6500	1600	1.6		In Production	Request
H89KPR	Techsem	capsule	Si Thyristors	Active Components	6000 to 6500	2200	2.2	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
H100KPR	Techsem	capsule	Si Thyristors	Active Components	6000 to 6500	3500	3.5	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
H125KPR	Techsem	capsule	Si Thyristors	Active Components	6000 to 6500	5200	5.2	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y50KPJ	Techsem	capsule	Si Thyristors	Active Components	3000 to 4200	1200	1.2	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y65KPJ	Techsem	capsule	Si Thyristors	Active Components	3000 to 4200	1900	1.9	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y76KPJ	Techsem	capsule	Si Thyristors	Active Components	3000 to 4200	2400	2.4	• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses	In Production	Request
Y30KKE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	400	0.4	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
Y38KKE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	800	0.8	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
Y50KKE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	1300	1.3	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
Y65KKE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	2000	2	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
Y76KKE	Techsem	capsule	Si Thyristors	Active Components	1200 to 1800	2700	2.7	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
Y70KKG	Techsem	capsule	Si Thyristors	Active Components	2000 to 2800	2100	2.1	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
Y76KKG	Techsem	capsule	Si Thyristors	Active Components	2000 to 2800	2700	2.7	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
Y89KKG	Techsem	capsule	Si Thyristors	Active Components	2000 to 2800	3800	3.8	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
Y100KKG	Techsem	capsule	Si Thyristors	Active Components	2000 to 2800	4800	4.8	• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses	In Production	Request
MTC26	Techsem	module	Si Thyristors	Active Components	1200 to 1800	26	0.026	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC40	Techsem	module	Si Thyristors	Active Components	1200 to 1800	40	0.04	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC55	Techsem	module	Si Thyristors	Active Components	1200 to 1800	55	0.055	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC70	Techsem	module	Si Thyristors	Active Components	1200 to 1800	70	0.07	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC90	Techsem	module	Si Thyristors	Active Components	1200 to 1800	90	0.09	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC110	Techsem	module	Si Thyristors	Active Components	1200 to 1800	110	0.11	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC135	Techsem	module	Si Thyristors	Active Components	1200 to 1800	135	0.135	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC160	Techsem	module	Si Thyristors	Active Components	1200 to 1800	160	0.16	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC182	Techsem	module	Si Thyristors	Active Components	1200 to 1800	182	0.182	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC200	Techsem	module	Si Thyristors	Active Components	2000 to 2500	200	0.2	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC250	Techsem	module	Si Thyristors	Active Components	1200 to 2500	250	0.25	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC285	Techsem	module	Si Thyristors	Active Components	1200 to 1800	285	0.285	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC500	Techsem	module	Si Thyristors	Active Components	1200 to 1800	500	0.5	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MTC570	Techsem	module	Si Thyristors	Active Components	1200 to 1800	570	0.57	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
Mt500	Techsem	module	Si Thyristors	Active Components	1200 to 1800	400	0.4	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
Mt400	Techsem	module	Si Thyristors	Active Components	2000 to 2500	400	0.4	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request

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Si Diodes

Series/Type	Manufacturer	Product Group	Category	Main Category	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Product Feature	Product Status
Y24ZPA	Techsem	capsule	Si Diodes	Active Components	400	1000	1	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y30ZPA	Techsem	capsule	Si Diodes	Active Components	400	1460	1.46	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y38ZPA	Techsem	capsule	Si Diodes	Active Components	400	1990	1.99	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y50ZPA	Techsem	capsule	Si Diodes	Active Components	400	6300	6.3	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y65ZPA	Techsem	capsule	Si Diodes	Active Components	400	8500	8.5	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y24ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	600	0.6	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y30ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	1310	1.31	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y38ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	1680	1.68	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y50ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	3000	3	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y76ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	6000	6	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
MDC26	Techsem	module	Si Diodes	Active Components	1200 to 1800	26	0.026	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC40	Techsem	module	Si Diodes	Active Components	1200 to 1800	40	0.04	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC55	Techsem	module	Si Diodes	Active Components	1200 to 1800	55	0.055	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC70	Techsem	module	Si Diodes	Active Components	1200 to 1800	70	0.07	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC90	Techsem	module	Si Diodes	Active Components	1200 to 1800	90	0.09	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC110	Techsem	module	Si Diodes	Active Components	1200 to 1800	110	0.11	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC135	Techsem	module	Si Diodes	Active Components	1200 to 1800	135	0.135	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC160	Techsem	module	Si Diodes	Active Components	1200 to 1800	160	0.16	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC182	Techsem	module	Si Diodes	Active Components	1200 to 1800	182	0.182	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC200	Techsem	module	Si Diodes	Active Components	1200 to 1800	200	0.2	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC250	Techsem	module	Si Diodes	Active Components	1200 to 2500	250	0.25	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC300	Techsem	module	Si Diodes	Active Components	1200 to 2500	300	0.3	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC500	Techsem	module	Si Diodes	Active Components	1200 to 2500	500	0.5	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC570	Techsem	module	Si Diodes	Active Components	1200 to 1800	570	0.57	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MD500	Techsem	module	Si Diodes	Active Components	1200 to 2500	400	0.4	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request

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Thyristor Diode Modules

Series/Type	Manufacturer	Product Group	Category	Main Category	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Product Feature	Product Status
MFC26	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	26	0.026	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC40	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	40	0.04	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC55	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	55	0.055	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC70	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	70	0.07	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC90	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	90	0.09	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC110	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	110	0.11	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC135	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	135	0.135	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC160	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	160	0.16	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC182	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	182	0.182	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC200	Techsem	module	Thyristor Diode Modules	Active Components	2000 to 2500	200	0.2	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC250	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 2500	250	0.25	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC285	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	285	0.285	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC500	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	500	0.5	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MFC570	Techsem	module	Thyristor Diode Modules	Active Components	1200 to 1800	570	0.57	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request

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Rectifier

Series/Type	Manufacturer	Product Group	Category	Main Category	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Product Feature	Product Status
MDS50	Techsem	module	Rectifier	Active Components	800 to 1600	50	0.05	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDS75	Techsem	module	Rectifier	Active Components	800 to 1600	75	0.075	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDS100	Techsem	module	Rectifier	Active Components	800 to 1600	100	0.1	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDS150	Techsem	module	Rectifier	Active Components	800 to 1600	150	0.15	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDS200	Techsem	module	Rectifier	Active Components	800 to 1600	200	0.2	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request

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SiC Mosfets

Series/Type	Manufacturer	Product Group	Category	Main Category	Housing	Topology	Blocking Voltage[V]	RDS on [mOhm]	Rated Current [A]	Rated Current [mA]	Rated Current [25°]	Rated Current [100°]	Operation Temperature[°C]	Product Feature	Product Status
PAAA12600HM	PNJ	SiC module	SiC Mosfets	Active Components	ED3	Half bridge	1200	1.6	600	600000					in production	Request
PAAC12600CM	PNJ	SiC module	SiC Mosfets	Active Components	HPD	Six-pack	1200	1.9	600	600000					in production	Request
PAAC12450CM	PNJ	SiC module	SiC Mosfets	Active Components	HPD	Six-pack	1200	2.7	450	450000					in production	Request
PAAC12400CM	PNJ	SiC module	SiC Mosfets	Active Components	HPD	Six-pack	1200	3.13	400	400000					in production	Request
PAAA12350BM	PNJ	SiC module	SiC Mosfets	Active Components	62mm	Half bridge	1200	4.5	350	350000					in production	Request
PAA12400BM3	PNJ	SiC module	SiC Mosfets	Active Components	62mm	Half bridge	1200	5.6	350	350000					in production	Request
PAIA12100AM	PNJ	SiC module	SiC Mosfets	Active Components	B1	Half bridge	1200	8	160	160000					in production	Request
P3M12013K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1200	13	165	165000					in production	Request
I3M12016MB	PNJ	SiC module	SiC Mosfets	Active Components	SOT-227	Discrete	1200	16	90	90000					in production	Request
I3M12016SM	PNJ	SiC module	SiC Mosfets	Active Components	SOT-227	Discrete	1200	16	100	100000					in production	Request
P3M12020K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1200	20	109	109000					in production	Request
PAIA12050AM	PNJ	SiC module	SiC Mosfets	Active Components	B1	Half bridge	1200	25	50	50000					in production	Request
P3M12025K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1200	25	112	112000					in production	Request
P3M17025K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1700	25	126	126000					in production	Request
P3M12025K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1200	25	113	113000					in production	Request
P3M12030K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1200	30	76	76000					in production	Request
P3M12030G7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7	Discrete	1200	30	65	65000					in production	Request
PAAC07750CM	PNJ	SiC module	SiC Mosfets	Active Components	HPD	Six-pack	750	1.5	750	750000					in production	Request
P3M06025K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	650	25	97	97000					in production	Request
P3M06025K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	650	25	97	97000					in production	Request
P3M06040L8	PNJ	SiC discrete	SiC Mosfets	Active Components	TOLL	Discrete	650	40	62	62000					in production	Request
P3M06040K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	650	40	68	68000					in production	Request
P3M06040K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	650	40	69	69000					in production	Request
P3M06045T7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7L-LF	Discrete	650	45	51	51000					in production	Request
P3M06045K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	650	45	51	51000					in production	Request
P3M06045G7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7	Discrete	650	45	51	51000					in production	Request
P3M06060T3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO220-3	Discrete	650	60	46	46000					in production	Request
P3M06060K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	650	60	40	40000					in production	Request
P3M12040K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1200	40	64	64000					in production	Request
P3M12040K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1200	40	63	63000					in production	Request
P3M12040G7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7	Discrete	1200	40	63	63000					in production	Request
P3M06060K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	650	60	40	40000					in production	Request
P3M06060G7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7	Discrete	650	60	44	44000					in production	Request
P3M06060L8	PNJ	SiC discrete	SiC Mosfets	Active Components	TOLL	Discrete	650	60	37	37000					in production	Request
I3M06060G7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7	Discrete	650	60	43	43000					in production	Request
I3M06060K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	650	60	44	44000					in production	Request
P3M06120K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	650	120	27	27000					in production	Request
P3M06120T3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO220-3	Discrete	650	120	29	29000					in production	Request
P3M06120K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	650	120	27	27000					in production	Request
P3M06300D5	PNJ	SiC discrete	SiC Mosfets	Active Components	DFN 5*6	Discrete	650	300	9	9000					in production	Request
P3M06300D8	PNJ	SiC discrete	SiC Mosfets	Active Components	DFN 8*8	Discrete	650	300	9	9000					in production	Request
P3M06300K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	650	300	9	9000					in production	Request
P3M06300T3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO220-3	Discrete	650	300	9	9000					in production	Request
P3M07013K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	750	13	140	140000					in production	Request
P3M07015K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	750	15	122	122000					in production	Request
P3M12080G7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7	Discrete	1200	80	32	32000					in production	Request
P3M12080K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1200	80	38	38000					in production	Request
P3M12080K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1200	80	38	38000					in production	Request
P3M12120K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1200	120	25	25000					in production	Request
P3M12120T7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7L-LF	Discrete	1200	120	19	19000					in production	Request
P3M12120K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1200	120	20	20000					in production	Request
P3M12160K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1200	160	19	19000					in production	Request
P3M12160K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1200	160	19	19000					in production	Request
P3M17040K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1700	40	73	73000					in production	Request
P3M17040K4	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-4	Discrete	1700	40	73	73000					in production	Request
P3M171K0K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1700	1000	6	6000					in production	Request
P3M171K0T3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO220-3	Discrete	1700	1000	6	6000					in production	Request
P3M171K0F3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO220F-3	Discrete	1700	1000	5.5	5500					in production	Request
P3M171K0G7	PNJ	SiC discrete	SiC Mosfets	Active Components	TO263-7	Discrete	1700	1000	6.3	6300					in production	Request
P3M173K0K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	1700	3000	4	4000					in production	Request
P3M173K0F3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO220F-3	Discrete	1700	3000	1.97	1970					in production	Request
P3M173K0T3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO220-3	Discrete	1700	3000	4	4000					in production	Request
P3M20050K3	PNJ	SiC discrete	SiC Mosfets	Active Components	TO247-3	Discrete	2000	50	56	56000					in production	Request
P3M07008PQ	PNJ	SiC discrete	SiC Mosfets	Active Components	PQPAK-LF-22	Discrete	750	8	208	208000					in production	Request
P3M07015PQ	PNJ	SiC discrete	SiC Mosfets	Active Components	PQPAK-LF-22	Discrete	750	15	122	122000					in production	Request
P3M07040PQ	PNJ	SiC discrete	SiC Mosfets	Active Components	PQPAK-LF-22	Discrete	750	40	55	55000					in production	Request
PDIB12120AM	PNJ	SiC discrete	SiC Mosfets	Active Components	B1	Four-pack	1200		200	200000					in production	Request
PAIB12120AM	PNJ	SiC module	SiC Mosfets	Active Components	B1	Half bridge	1200	7	120	120000					in production	Request
GCMX034C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	34	51	51000	51	37	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ	in production	Request
GCMS034C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	34	53	53000	53	38	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ	in production	Request
GCMX016B120B3H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Full Bridge Module	1200	16.6	95	95000	95	82	-55 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Request
GCMX008B120B3H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Full Bridge Module	1200	8.6	120	120000	120	120	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Request
GCMX014C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	14.5	104	104000	104	75	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Request
GCMX007C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	7.4	192	192000	192	137	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Request
GCMS014C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	15	103	103000	103	74	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Request
GCMS007C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	7.3	189	189000	189	135	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Request
GP3T080A120TS	SemiQ	SiC discrete	SiC Mosfets	Active Components	TSPAK	Discrete	1200	80	27	27000	27	19	-55 to 175	• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving • Ceramic isolated back paddle	in production	Request
GP3T040A120TS	SemiQ	SiC discrete	SiC Mosfets	Active Components	TSPAK	Discrete	1200	38	50	50000	50	36	-55 to 175	• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 300mJ • Driver source pin for gate driving • Ceramic isolated back paddle	in production	Request
GP3T020A120TS	SemiQ	SiC discrete	SiC Mosfets	Active Components	TSPAK	Discrete	1200	18	89	89000	89	64	-55 to 175	• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 700mJ • Driver source pin for gate driving • Ceramic isolated back paddle	in production	Request
GP3T016A120TS	SemiQ	SiC discrete	SiC Mosfets	Active Components	TSPAK	Discrete	1200	16	101	101000	101	72	-55 to 175	• High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving • Ceramic isolated back paddle	in production	Request
GP3T034A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	32	62	62000	62	44	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving	in production	Request
GP3T017A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	15	120	120000	120	86	-55 to 175	• Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer creepage distance	in production	Request
GP3T014A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	14	133	133000	133	96	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving	in production	Request
GCMX016C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	16.5	103	103000	103	74	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Request
GCMX080C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	84	28	28000	28	21	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ	in production	Request
GCMS080C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	84	28	28000	28	21	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ	in production	Request
GCMX040C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	39	53	53000	53	38	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ	in production	Request
GCMS040C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	39	53	53000	53	38	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ	in production	Request
AS3T016A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	16	132	132000	132	95	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101	in production	Request
AS3T040A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	38	62	62000	62	44	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 330mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q103	in production	Request
GP2T020A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	20	119	119000	119	86	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving	in production	Request
GP2T040A120U	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-3L	Discrete	1200	37	63	63000	63	47	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*	in production	Request
GP2T040A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	37	63	63000	63	47	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving	in production	Request
GP2T040A120J	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-263-7L	Discrete	1200	38	66	66000	66	49	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving	in production	Request
GP2T080A120U	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-3L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*	in production	Request
GP2T080A120H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design	in production	Request
GP2T080A120J	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-263-7L	Discrete	1200	77	35	35000	35	26	-55 to 175	• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving	in production	Request
GCMX003A120S3B1-N	SemiQ	SiC module	SiC Mosfets	Active Components	S3	Half Bridge Module	1200	3	625	625000	625		-40 to 175	• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • AlN Isolated baseplate	in production	Request
GCMX003A120S7B1	SemiQ	SiC module	SiC Mosfets	Active Components	S7 Half Bridge	Half Bridge Module	1200	3	529	529000	529		-40 to 175	• 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Isolated baseplate	in production	Request
GCMX005A120B3B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Half Bridge Module	1200	4.4	383	383000	383	331	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX005A120S3B1-N	SemiQ	SiC module	SiC Mosfets	Active Components	S3	Half Bridge Module	1200	4.8	424	424000	424		-40 to 175	• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • AlN Isolated baseplate	in production	Request
GCMX005A120S7B1	SemiQ	SiC module	SiC Mosfets	Active Components	S7 Half Bridge	Half Bridge Module	1200	4.9	348	348000	348		-40 to 175	• 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Isolated baseplate	in production	Request
GCMX008C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	8.4	188	188000	188	134	-55 to 175	• High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Request
GCMS008C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	8.4	189	189000	189	135	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Request
GCMX010A120B3H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Full Bridge Module	1200	8.9	201	201000	201		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Request
GCMS010B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	9	218	218000	218	157	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX010B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	10	202	202000	202	146	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX010A120B3B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Half Bridge Module	1200	9	173	173000	173	151	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX010A120B2B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Half Bridge Module	1200	9	214	214000	214	186	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMS016C120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	16.5	103	103000	103	74	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ	in production	Request
GCMX020A120B2H2P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Full Bridge Module	1200	18	102	102000	102		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals	in production	Request
GCMX020A120B2H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Full Bridge Module	1200	18	102	102000	102	88	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX020A120B3H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Full Bridge Module	1200	18.1	93	93000	93	81	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX020A120B2B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Half Bridge Module	1200	19	102	102000	102	89	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMS020B120S1-E1	SemiQ	SiC module	SiC Mosfets	Active Components	SOT-227	Module	1200	20	113	113000	113	81	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX020B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	20	113	113000	113	81	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX040B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	40	57	57000	57	42	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMS040B120S1-E1	SemiQ	SiC module	SiC Mosfets	Active Components	SOT-227	Module	1200	37	57	57000	57	42	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX040A120B2B1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Half Bridge Module	1200	38	56	56000	56		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Request
GCMX040A120B2H2P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Full Bridge Module	1200	38	56	56000	56		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals	in production	Request
GCMX040A120B3H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B3	Full Bridge Module	1200	38	53	53000	53	46	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX040A120B2H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Full Bridge Module	1200	38	56	56000	56	49	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Request
GCMX080A120B2H2P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Full Bridge Module	1200	77	27	27000	27		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • Split DC negative terminals	in production	Request
GCMX080A120B2H1P	SemiQ	SiC module	SiC Mosfets	Active Components	B2	Full Bridge Module	1200	77	27	27000	27		-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections	in production	Request
GCMS080B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	77	30	30000	30	22	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation	in production	Request
GCMX080B120S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1200	80	30	30000	30	22	-55 to 175	• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation	in production	Request
AS2T030A170H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1700	28	83	83000	83	61	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,900 V • Avalanche tested to 600mJ* • Driver source pin for gate driving • Qualified for Automotive Applications Product Validation according to AEC-Q101	in production	Request
GP2T030A170H	SemiQ	SiC discrete	SiC Mosfets	Active Components	TO-247-4L	Discrete	1700	31	83	83000	83	61	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,900 V • Avalanche tested to 600mJ* • Driver source pin for gate driving	in production	Request
GCMX030A170S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1700	31	66	66000	66	48	-55 to 175	• High speed switching • Simple to drive • Avalanche tested to 600mJ* • Kelvin reference for stable operation	in production	Request
GCMX015A170S1-E1	SemiQ	SiC discrete	SiC Mosfets	Active Components	SOT-227	Discrete	1700	16	123	123000	123	89	-55 to 175	• High speed switching • Simple to drive • Avalanche tested to 600mJ* • Kelvin reference for stable operation	in production	Request
GCMX005A170S3B1-N	SemiQ	SiC module	SiC Mosfets	Active Components	S3	Half Bridge Module	1700	5.3	397	397000	397		-40 to 175	• 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1900V • Kelvin reference for stable operation • AlN Isolated baseplate	in production	Request

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SiC Diodes

Series/Type	Manufacturer	Product Group	Category	Main Category	Housing	Topology	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Rated Current [25°]	Operation Temperature[°C]	Product Feature	Product Status
GP3D010A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D010A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D010A065D	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-263-2L (D2PAK)	Discrete	650	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D012A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	12	12000	12	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ	in production	Request
GP3D012A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	12	12000	12	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V	in production	Request
GP3D016A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	650	16	16000	16	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V	in production	Request
GP3D020A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D020A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D020A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	650	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D024A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	650	24	24000	24	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg	in production	Request
GP3D030A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	30	30000	30	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ	in production	Request
GP3D040A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	650	40	40000	40	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D050A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	50	50000	50	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V	in production	Request
GP3D006A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	6	6000	6	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V	in production	Request
GP3D006A065F	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L-FP	Discrete	650	6	6000	6	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ* • All parts tested to greater than 715V • Isolated case	in production	Request
GP3D008A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	8	8000	8	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V	in production	Request
GP3D008A065D	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-263-2L (D2PAK)	Discrete	650	8	8000	8	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V	in production	Request
GP3D008A065F	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L-FP	Discrete	650	8	8000	8	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ* • All parts tested to greater than 715V • Isolated case	in production	Request
GP3D010A120S	SemiQ	SiC discrete	SiC Diodes	Active Components	DO-214AB	Discrete	1200	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • All parts tested to 1400V	in production	Request
GP3D010A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	1200	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V	in production	Request
GP3D010A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V	in production	Request
GP3D015A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	15	15000	15	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V	in production	Request
GP3D015A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	1200	15	15000	15	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	1200	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	1200	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D030A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	30	30000	30	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V	in production	Request
GP3D030A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	1200	30	30000	30	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D040A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	1200	40	40000	40	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D050A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	50	50000	50	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V	in production	Request
GP3D060A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	1200	60	60000	60	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D005A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1700	5	5000	5	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ	in production	Request
GP3D010A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1700	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current	in production	Request
GP3D020A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1700	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V	in production	Request
GP3D050B170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1700	50	50000	50	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 1250mJ* • All parts tested to greater than 1,870V	in production	Request
GHXS010A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	600	10	10000	10	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS020A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	600	20	20000	20	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS030A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	600	30	30000	30	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V	in production	Request
GHXS030A060S-D1E	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	600	30	30000	30	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS050A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	600	50	50000	50	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS050B065S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	650	50	50000	50	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS100B065S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	650	100	100000	100	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS015A120S-D1	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	1200	15	15000	15	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS015A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	15	15000	15	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS030A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	30	30000	30	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS030A120S-D1E	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	1200	30	30000	30	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS045A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	45	45000	45	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS050B120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	50	50000	50	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS060A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	60	60000	60	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation	in production	Request
GHXS100B120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	100	100000	100	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS300A120S7D5	SemiQ	SiC module	SiC Diodes	Active Components	S7 Half Bridge	Half Bridge	1200	300	300000	300	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS400A120S7D5	SemiQ	SiC module	SiC Diodes	Active Components	S7 Half Bridge	Half Bridge	1200	400	400000	400	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS050B170S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Discrete	1700	50	50000	50	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1,870V	in production	Request
GHXS100B170S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Discrete	1700	100	100000	100	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1,870V	in production	Request