Our products at a glance

Always the right solution for your application

Active Components

Si Diodes

Series/Type	Manufacturer	Product Group	Category	Main Category	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Product Feature	Product Status
Y24ZPA	Techsem	capsule	Si Diodes	Active Components	400	1000	1	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y30ZPA	Techsem	capsule	Si Diodes	Active Components	400	1460	1.46	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y38ZPA	Techsem	capsule	Si Diodes	Active Components	400	1990	1.99	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y50ZPA	Techsem	capsule	Si Diodes	Active Components	400	6300	6.3	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y65ZPA	Techsem	capsule	Si Diodes	Active Components	400	8500	8.5	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y24ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	600	0.6	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y30ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	1310	1.31	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y38ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	1680	1.68	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y50ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	3000	3	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
Y76ZPC	Techsem	capsule	Si Diodes	Active Components	1200 to 2000	6000	6	• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators	In Production	Request
MDC26	Techsem	module	Si Diodes	Active Components	1200 to 1800	26	0.026	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC40	Techsem	module	Si Diodes	Active Components	1200 to 1800	40	0.04	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC55	Techsem	module	Si Diodes	Active Components	1200 to 1800	55	0.055	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC70	Techsem	module	Si Diodes	Active Components	1200 to 1800	70	0.07	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC90	Techsem	module	Si Diodes	Active Components	1200 to 1800	90	0.09	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC110	Techsem	module	Si Diodes	Active Components	1200 to 1800	110	0.11	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC135	Techsem	module	Si Diodes	Active Components	1200 to 1800	135	0.135	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC160	Techsem	module	Si Diodes	Active Components	1200 to 1800	160	0.16	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC182	Techsem	module	Si Diodes	Active Components	1200 to 1800	182	0.182	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC200	Techsem	module	Si Diodes	Active Components	1200 to 1800	200	0.2	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC250	Techsem	module	Si Diodes	Active Components	1200 to 2500	250	0.25	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC300	Techsem	module	Si Diodes	Active Components	1200 to 2500	300	0.3	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC500	Techsem	module	Si Diodes	Active Components	1200 to 2500	500	0.5	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDC570	Techsem	module	Si Diodes	Active Components	1200 to 1800	570	0.57	• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MD500	Techsem	module	Si Diodes	Active Components	1200 to 2500	400	0.4	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request

Scroll

Rectifier

Series/Type	Manufacturer	Product Group	Category	Main Category	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Product Feature	Product Status
MDS50	Techsem	module	Rectifier	Active Components	800 to 1600	50	0.05	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDS75	Techsem	module	Rectifier	Active Components	800 to 1600	75	0.075	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDS100	Techsem	module	Rectifier	Active Components	800 to 1600	100	0.1	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDS150	Techsem	module	Rectifier	Active Components	800 to 1600	150	0.15	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request
MDS200	Techsem	module	Rectifier	Active Components	800 to 1600	200	0.2	• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving	In Production	Request

Scroll

SiC Diodes

Series/Type	Manufacturer	Product Group	Category	Main Category	Housing	Topology	Blocking Voltage[V]	Rated Current [A]	Rated Current [mA]	Rated Current [25°]	Operation Temperature[°C]	Product Feature	Product Status
GP3D010A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D010A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D010A065D	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-263-2L (D2PAK)	Discrete	650	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D012A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	12	12000	12	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ	in production	Request
GP3D012A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	12	12000	12	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V	in production	Request
GP3D016A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	650	16	16000	16	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V	in production	Request
GP3D020A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D020A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D020A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	650	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V	in production	Request
GP3D024A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	650	24	24000	24	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg	in production	Request
GP3D030A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	30	30000	30	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ	in production	Request
GP3D040A065U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	650	40	40000	40	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V	in production	Request
GP3D050A065B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	650	50	50000	50	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V	in production	Request
GP3D006A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	6	6000	6	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V	in production	Request
GP3D006A065F	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L-FP	Discrete	650	6	6000	6	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ* • All parts tested to greater than 715V • Isolated case	in production	Request
GP3D008A065A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	650	8	8000	8	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V	in production	Request
GP3D008A065D	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-263-2L (D2PAK)	Discrete	650	8	8000	8	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V	in production	Request
GP3D008A065F	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L-FP	Discrete	650	8	8000	8	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ* • All parts tested to greater than 715V • Isolated case	in production	Request
GP3D010A120S	SemiQ	SiC discrete	SiC Diodes	Active Components	DO-214AB	Discrete	1200	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • All parts tested to 1400V	in production	Request
GP3D010A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	1200	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V	in production	Request
GP3D010A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V	in production	Request
GP3D015A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	15	15000	15	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V	in production	Request
GP3D015A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	1200	15	15000	15	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120A	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-220-2L	Discrete	1200	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V	in production	Request
GP3D020A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	1200	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D030A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	30	30000	30	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V	in production	Request
GP3D030A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	1200	30	30000	30	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D040A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	1200	40	40000	40	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D050A120B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1200	50	50000	50	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V	in production	Request
GP3D060A120U	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-3L	Dual Diode Pack	1200	60	60000	60	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V	in production	Request
GP3D005A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1700	5	5000	5	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ	in production	Request
GP3D010A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1700	10	10000	10	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current	in production	Request
GP3D020A170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1700	20	20000	20	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V	in production	Request
GP3D050B170B	SemiQ	SiC discrete	SiC Diodes	Active Components	TO-247-2L	Discrete	1700	50	50000	50	-55 to 175	• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 1250mJ* • All parts tested to greater than 1,870V	in production	Request
GHXS010A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	600	10	10000	10	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS020A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	600	20	20000	20	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS030A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	600	30	30000	30	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V	in production	Request
GHXS030A060S-D1E	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	600	30	30000	30	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS050A060S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	600	50	50000	50	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS050B065S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	650	50	50000	50	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS100B065S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	650	100	100000	100	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Request
GHXS015A120S-D1	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	1200	15	15000	15	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS015A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	15	15000	15	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS030A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	30	30000	30	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS030A120S-D1E	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Rectifier Bridge	1200	30	30000	30	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS045A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	45	45000	45	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS050B120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	50	50000	50	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS060A120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	60	60000	60	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation	in production	Request
GHXS100B120S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Dual Diode Pack	1200	100	100000	100	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS300A120S7D5	SemiQ	SiC module	SiC Diodes	Active Components	S7 Half Bridge	Half Bridge	1200	300	300000	300	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS400A120S7D5	SemiQ	SiC module	SiC Diodes	Active Components	S7 Half Bridge	Half Bridge	1200	400	400000	400	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Request
GHXS050B170S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Discrete	1700	50	50000	50	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1,870V	in production	Request
GHXS100B170S-D3	SemiQ	SiC module	SiC Diodes	Active Components	SOT-227	Discrete	1700	100	100000	100	-55 to 175	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1,870V	in production	Request
P3D12015T2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220-2	Discrete	1200	15	15000					Request
P3D12010K3	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-3	Discrete	1200	10	10000					Request
P3D12015K2	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-2	Discrete	1200	15	15000					Request
P3D06020K3A	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-3	Discrete	650	20	20000					Request
P3D06030K2	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-2	Discrete	650	30	30000					Request
P3D12002B0	PNJ	SiC discrete	SiC Diodes	Active Components	SMB	Discrete	1200	2	2000					Request
P3D06002E2	PNJ	SiC discrete	SiC Diodes	Active Components	TO252-3	Discrete	650	2	2000					Request
P3D06015F2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220F-2	Discrete	650	15	15000					Request
P3D06006T2A	PNJ	SiC discrete	SiC Diodes	Active Components	TO220-2	Discrete	650	6	6000					Request
P3D06002B0	PNJ	SiC discrete	SiC Diodes	Active Components	SMB	Discrete	650	2	2000					Request
P6D12002E2	PNJ	SiC discrete	SiC Diodes	Active Components	TO252-2	Discrete	1200	2	2000					Request
P3D06010F2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220F-2	Discrete	650	10	10000					Request
P3D06016K3	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-3	Discrete	650	16	16000					Request
P3D06040K2	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-2	Discrete	650	40	40000					Request
P3D06060K3	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-3	Discrete	650	60	60000					Request
P3D06060K2	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-2	Discrete	650	60	60000					Request
P3D06006G2	PNJ	SiC discrete	SiC Diodes	Active Components	TO263-2	Discrete	650	6	6000					Request
P3D06006E2	PNJ	SiC discrete	SiC Diodes	Active Components	TO252-2	Discrete	650	6	6000					Request
P3D06006E3	PNJ	SiC discrete	SiC Diodes	Active Components	TO252-3	Discrete	650	6	6000					Request
P3D06008T2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220-2	Discrete	650	8	8000					Request
P3D06008I2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220I-2	Discrete	650	8	8000					Request
P3D06008F2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220F-2	Discrete	650	8	8000					Request
P3D06008G2	PNJ	SiC discrete	SiC Diodes	Active Components	TO263-2	Discrete	650	8	8000					Request
P3D06008E2	PNJ	SiC discrete	SiC Diodes	Active Components	TO252-2	Discrete	650	8	8000					Request
P3D06010T2A	PNJ	SiC discrete	SiC Diodes	Active Components	TO220-2	Discrete	650	10	10000					Request
P6D12002T2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220-2	Discrete	1200	2	2000					Request
P3D06002G2	PNJ	SiC discrete	SiC Diodes	Active Components	TO263-2	Discrete	650	2	2000					Request
P3D06004E2	PNJ	SiC discrete	SiC Diodes	Active Components	TO252-2	Discrete	650	4	4000					Request
P3D06004G2	PNJ	SiC discrete	SiC Diodes	Active Components	TO263-2	Discrete	650	4	4000					Request
P3D06006I2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220I-2	Discrete	650	6	6000					Request
P3D06006F2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220F-2	Discrete	650	6	6000					Request
P3D12020K3	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-3	Discrete	1200	20	20000					Request
P3D12010K2	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-2	Discrete	1200	10	10000					Request
P3D12010T2	PNJ	SiC discrete	SiC Diodes	Active Components	TO220-2	Discrete	1200	10	10000					Request
P3D12005K2	PNJ	SiC discrete	SiC Diodes	Active Components	TO247-2	Discrete	1200	5	5000					Request