PN Junction

Founded in September 2018, PN Junction Semiconductor (Zhejiang) Co., Ltd. is a leading provider of wide-bandgap semiconductor power devices. The company specializes in automotive silicon carbide (SiC) MOSFETs and SiC Schottky diodes (SBDs).

PN Junction's product range includes:

  • SiC MOSFETs
  • SiC Schottky Barrier Diodes (SBDs)
  • SiC Modules

These products are widely used in electric vehicles, IT equipment, photovoltaic inverters, energy storage systems, and industrial applications.

Technical Expertise and Industry Advantages

The founder, Dr. Huang Xing, has been working on the development of SiC and GaN power devices since 2009 under the guidance of Professor Jayant Baliga and Professor Alex Huang. PN Junction's products meet AEC-Q101 specifications, making them ideal for various customer applications.

Commitment

PN Junction Semiconductor is dedicated to advancing the semiconductor industry through continuous innovation and technical excellence. The company provides customized, comprehensive solutions for its customers.

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Key Facts
Founded in 2018
Headquarters in Ningbo, China
Over 100 employees, 55% in R&D
Production facilities in Hangzhou, China
Good to know
Technology leader in the Asia-Pacific region
Best in class temperature stability of RDS(on)
Ultra-Small Qgd
Very low Rsp (RDS(on) x active area)
Very low V(th) and RDS(on) drifting over lifetime
Strong Cooperation with XFab / Texas
Aufnahme einer Silizium-basierten Diode, ein aktives Bauelement zur effizienten Gleichrichtung und zum Schutz in elektronischen Leistungsschaltungen.

SiC diodes

MOSFETs

SiC Mosfets

Infocenter

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